Three-dimensional coupler based on silicon through hole and preparation method thereof

Abstract

The invention discloses a three-dimensional coupler based on a silicon through hole and a preparation method thereof and relates to the field of a three-dimensional integrated circuit. The method is mainly characterized in that through the silicon through hole three-dimensional integration technology and the multi-joint structure, in combination with the reactive ion corrosion technology, electrochemical deposition, plasma enhanced chemical vapor deposition and chemical vapor deposition methods, interconnection wire length and the chip area are effectively reduced, data transmission bandwidthand the integration degree are improved, purposes of simultaneously improving performance of the integrated circuit, reducing power consumption and reducing weight and volume are achieved, and problems that the chip occupation area is large, the adjustable space of the coupling degree, directionality and other indicators are small, especially the isolation degree is difficult to improve and integration requirements are difficult to meet in the prior art are solved.

Description

technical field [0001] The invention belongs to the field of three-dimensional integrated circuits, and in particular relates to a three-dimensional coupler based on through-silicon holes and a preparation method thereof. Background technique [0002] Three-dimensional integration technology distributes the functional modules of the circuit system on different chips (which can be chips with different functions and different processes), and forms a three-dimensional stack through low-temperature bonding. In a three-dimensional integrated circuit (3-Dimension Integrated Circuit, 3-D IC), the electrical connection between the upper and lower modules is realized through a through-silicon via (TSV), which has a decisive effect on the performance of the entire system. 3-D IC has the advantages of being able to greatly reduce the global interconnect length, increase data transmission bandwidth, reduce chip area, increase integration, and realize chip heterogeneous integration. It c...

AI Technical Summary

Problems solved by technology

The traditional planar microwave coupler not only occupies a huge chip area, but also has little room for adjustment of coupling degree, directivity and other indicators, especially the isolation degree is difficult to improve

In addition, discrete three-dimensional microwave couplers based on low-temperature co-fired ceramic technology are difficult to meet the requirements of integration

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