Three-dimensional hybrid ring coupler based on through silicon via

Abstract

The invention discloses a three-dimensional hybrid ring coupler based on a silicon via. The three-dimensional hybrid ring coupler comprises a silicon substrate layer module, a top layer module and a bottom layer module; the top layer module is arranged on the upper surface of the silicon substrate layer module; the bottom layer module is arranged on the lower surface of the silicon substrate layermodule; the silicon substrate module comprises a grounding shielding ring penetrating through a silicon substrate and a signal interconnection column, the signal interconnection column is arranged inthe center area of the grounding shielding ring, a first dielectric layer is arranged on the side wall of the outer periphery of the grounding shielding ring, and a second dielectric layer is arranged on the side wall of the inner periphery of the grounding shielding ring, and a third dielectric layer is arranged on the peripheral side wall of the signal interconnection column. Based on the silicon via technology, the silicon via structure is good in compatibility with other silicon-based elements, and three-dimensional integration of a microwave system is easy to achieve; a signal line and the silicon substrate are isolated by a grounding layer and the grounding shielding ring, so that the signal transmission loss is reduced, and the electromagnetic isolation characteristic among branches is improved.

Description

technical field [0001] The invention belongs to the field of three-dimensional integrated circuits, and in particular relates to a three-dimensional hybrid ring coupler based on through-silicon vias. Background technique [0002] The microwave three-dimensional integrated circuit distributes each active and passive module of the microwave circuit system on different silicon-based chips, and forms a three-dimensional stack structure through low-temperature bonding. In a three-dimensional integrated circuit (Three-dimensional integrated circuit, 3-D IC), the electrical connection between the upper and lower modules is realized through a through silicon via (Through Silicon Via, TSV). The microwave 3-D IC has the advantages of greatly reducing the length of the transmission line, reducing the system area, and improving the integration level, which can simultaneously improve the performance of the microwave system, reduce the loss, and reduce the weight and volume. [0003] Hyb...

AI Technical Summary

Problems solved by technology

The planar hybrid ring coupler of the traditional microstrip line not only occupies a huge chip area, but also has a small isolation, which is difficult to apply in the microwave and millimeter wave frequency bands; while the discrete coupler based on the low temperature co-fired ceramic (Low Temperature Co-fired Ceramic LTCC) process Three-dimensional hybrid ring coupler is difficult to meet the requirements of integration

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