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A processing method and equipment for high-efficiency, high-resolution nano-patterns

A nano-pattern and processing method technology, applied in the field of nano-processing, can solve the problems of low depth and width of nano-pattern processing, poor image quality, etc., and achieve the effect of enhanced etching ability, high resolution and low cost

Active Publication Date: 2021-05-07
CHINA UNIV OF PETROLEUM (EAST CHINA)
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Problems solved by technology

[0006] The purpose of the present invention is to provide a processing method and equipment for high-efficiency, high-resolution nano-patterns, to solve the problems of low aspect ratio and poor graphics quality in the processing of nano-patterns in the rotating field

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  • A processing method and equipment for high-efficiency, high-resolution nano-patterns
  • A processing method and equipment for high-efficiency, high-resolution nano-patterns

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Embodiment Construction

[0044] The following describes the embodiments of the present invention in detail, and those skilled in the art will understand that the following embodiments are intended to explain the present invention, and should not be regarded as limiting the present invention. Unless otherwise specified, if the specific techniques or conditions are not clearly described in the following examples, those skilled in the art can carry out according to the commonly used techniques or conditions in this field or according to the product instructions. The reagents or instruments used were not indicated by the manufacturer, and they were all conventional products available in the market.

[0045] A processing method for high-efficiency and high-resolution nano-patterns of the present invention, specifically comprising the following steps:

[0046] (1) First prepare a surface plasmon lens with an alternating composite structure of bowknot and concentric semicircular grooves. The surface plasmon ...

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Abstract

The invention discloses a surface plasmon lens design method for nano-gap near-field lithography. According to the propagation characteristics of surface plasmons on the air / photoresist multi-layer continuous dielectric surface, a plasmon beam can not only achieve super-diffraction-limited beamforming in the nano-gap layer, but also keep it in the photoresist layer. Concentric alternating half-circle groove structure for beam focusing capability. By designing a bowtie structure with an ultra-small size in the center of the semicircular groove, local surface plasmons with super-strong confinement are excited, which further enhances the etching ability of the spotlight through the photoresist layer in the longitudinal direction. The bowtie composite structure of concentric alternating semicircular grooves can form reflected electromagnetic wave coupling with the nanostructured metal film layer prepared on the surface of the disk, and form a beam spot with enhanced energy and small size at the center of the bowknot, which helps to improve the depth of nanopattern processing. Wide ratio, thus realizing high-efficiency, high-resolution, low-cost nanofabrication.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a surface plasmon excitation method for realizing large aspect ratio near-field optical etching, and in particular to a processing method and equipment for high-efficiency and high-resolution nano-patterns. Background technique [0002] Optical exposure is the use of optical imaging to image the mask pattern onto the photoresist surface. During the processing, the resolution of the processed pattern is an important basis for measuring the integration of the processed pattern. Limited by the optical diffraction limit, to obtain smaller processing size and higher processing resolution, higher resolution can be obtained by reducing the wavelength of incident light, increasing optical numerical aperture or reducing process parameters. Some methods that can break through the diffraction limit can also be used to achieve super-resolution beamforming. For the photolithography tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G03F7/20
CPCG02B5/008G03F7/20
Inventor 纪佳馨徐鹏飞吴宝贵李静
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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