Silicon wafer for calibration, preparation method thereof and application thereof
A technology of silicon wafers and negatives, which is applied in the field of silicon wafers, can solve the problems of not meeting the requirements of cost control, inaccurate measurement of the number of particles, and high price of master chips, so as to achieve good spraying effect, meet the needs of daily monitoring, and reduce costs. low effect
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Embodiment 1
[0048] This embodiment provides a silicon chip for correction, the number of particles on the surface of the silicon chip for correction is 17021pcs, and the surface particle density is 60pcs / cm 2 .
[0049] Described preparation method comprises the steps:
[0050] In a tenth-class clean room, the standard particle liquid with a particle size of 0.204 μm is sprayed vertically on the surface without scratches and the number of particles on the surface is less than 100 through the atomizer with an atomization rate of 0.2mL / min as a concentric path. On the 8-inch substrate, the spraying time is 16s, the distance between the atomizer nozzle and the substrate is 5cm, the concentric circle path starts from the center of the circle, and completes 4 concentric circles from the inside to the outside to obtain a silicon wafer for calibration.
[0051] In the tenth class clean room, the particle detector KAL Tencor SP1 is calibrated with a standard chip with a particle size of 0.204 μm...
Embodiment 2
[0058] This embodiment provides a silicon chip for correction, the number of surface particles of the silicon chip for correction is 17359pcs, and the surface particle density is 100pcs / cm 2 .
[0059] Described preparation method comprises the steps:
[0060] In the tenth class clean room, the standard particle liquid with a particle size of 0.155 μm is sprayed vertically on the surface without scratches and the number of particles on the surface is less than 100 through the atomizer with an atomization rate of 0.2mL / min as a concentric path. On the 8-inch substrate, the spraying time is 16s, the distance between the atomizer nozzle and the substrate is 5cm, the concentric circle path starts from the center of the circle, and completes 4 concentric circles from the inside to the outside to obtain a silicon wafer for calibration.
[0061] In the tenth-class clean room, the particle detector KAL Tencor SP1 is calibrated with a standard chip with a particle size of 0.155 μm to ...
Embodiment 3
[0064] This embodiment provides a silicon chip for correction, the number of surface particles of the silicon chip for correction is 16556pcs, and the surface particle density is 30pcs / cm 2 .
[0065] Described preparation method comprises the steps:
[0066] In the tenth class clean room, the standard particle liquid with a particle size of 1.112 μm is sprayed vertically on the surface without scratches and the number of particles on the surface is less than 100 through an atomizer with an atomization rate of 0.2mL / min as a concentric path. On the 8-inch substrate, the spraying time is 16s, the distance between the atomizer nozzle and the substrate is 5cm, the concentric circle path starts from the center of the circle, and completes 4 concentric circles from the inside to the outside to obtain a silicon wafer for calibration.
[0067] In the tenth class clean room, the particle detector KAL Tencor SP1 is calibrated with a standard sheet with a particle size of 1.112 μm to o...
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