Static induction thyristor and manufacturing method thereof

A technology of electrostatic induction and manufacturing method, which is applied in the direction of thyristor, semiconductor/solid-state device manufacturing, circuit, etc., can solve the problems of SITH switching speed, withstand voltage and power consumption that cannot meet the requirements of use, and achieve the benefit of large-scale production and soft recovery characteristics, the effect of low switching loss

Inactive Publication Date: 2019-03-08
中健共创(深圳)大健康产业投资有限公司
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Problems solved by technology

[0003] With the development of the power electronics field, terminal equipment has higher and higher requirements for SITH devices. At present, the SITH manufactured by traditional technology can no longer meet the latest application requirements in terms of switching speed, withstand voltage and power consumption, and urgently needs to be adopted. New technology to improve the performance of SITH

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  • Static induction thyristor and manufacturing method thereof
  • Static induction thyristor and manufacturing method thereof
  • Static induction thyristor and manufacturing method thereof

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Embodiment Construction

[0044] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0045] In describing the present invention, it is to be understood that the terms "central", "longitudinal",

[0046] "Landscape", "Top", "Down", "Front", "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", " The orientation or positional relationship indicated by "outside", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, so as to Specific orientation configurations and operations, therefore, are not to be construed as limitations on the invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and should n...

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Abstract

The invention provides a static induction thyristor and a manufacturing method thereof, and solves the problem that an SITH obtained in the prior art cannot meet the latest use requirements. A first highly-doped region is added to a positive electrode region of a device, so that a parasitic transistor is formed; the conduction voltage drop of the SITH is reduced, and meanwhile, the injection efficiency of a positive electrode is reduced by the first highly-doped region of the positive electrode region, so that the reverse recovery time is shortened, and the reverse recovery charge is also obviously reduced; and the final SITH device has a higher switching speed and lower switching loss. An epitaxial layer is also added between a fourth highly-doped region and a substrate, so that the effect of a buffer layer is achieved; during the reverse recovery period, the electric field intensity of the substrate and the epitaxial layer is reduced and the extraction speed of carriers is reduced, so that high-voltage oscillation is remarkably reduced, and a softer recovery characteristic is obtained; and the reverse recovery charge is less, so that the power consumption of the device is furtherreduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electrostatic induction thyristor and a manufacturing method thereof. Background technique [0002] Static Induction Thyristor (SITH) is developed on the basis of Static Induction Transistor (SIT). It is a new type of semiconductor device. It has three terminals: anode (Anode, A) and cathode (Cathode, K) and gate (Gate, G), SITH is a normally open device. When the gate is open, a forward voltage is applied between the anode and the cathode, and SITH is turned on, and a voltage is applied between the gate and the cathode. When the reverse voltage is applied, the current between the anode and the cathode is pinched off, and SITH is turned off, and the greater the reverse voltage applied to the gate, the stronger the ability to shut off the current. [0003] With the development of the power electronics field, terminal equipment has higher and higher requirements for SITH...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L21/332H01L29/06
CPCH01L29/74H01L29/0603H01L29/0615H01L29/0684H01L29/66363
Inventor 不公告发明人
Owner 中健共创(深圳)大健康产业投资有限公司
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