Ceramic substrate and manufacturing method thereof

A technology of ceramic base and manufacturing method, which is applied in the field of substrate manufacturing and processing, can solve the problems of low warpage and large cutting depth, and achieve the effects of enhancing warpage, improving warpage and reducing residual stress

Inactive Publication Date: 2019-03-05
ZHEJIANG TC CERAMIC ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Another object of the present invention is to provide a ceramic base, which has low warpage and solves the problem of extreme difference in cutting depth in the cutting process, thereby improving product yield

Method used

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  • Ceramic substrate and manufacturing method thereof
  • Ceramic substrate and manufacturing method thereof
  • Ceramic substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] According to the above-mentioned manufacturing process of the ceramic base, on the first surface of the aluminum nitride cooked ceramic substrate with a thickness of 0.5mm, a metal pattern with a thickness of 20um is printed and dried by a screen printing process; on the second surface of the ceramic substrate On top, use the same printing process to print a metal pattern with a thickness of 30um and dry it. Then, on the pad area of ​​the first metal layer, solder printing is completed using a screen printing process, and the package frame is attached on the solder layer.

[0052] According to the aforementioned manufacturing process of the ceramic base, the printed metal layer and the ceramic base with the frame are sintered under vacuum conditions. In this embodiment, the degree of vacuum during sintering is 5x10 -2 Pa, the sintering temperature is 890°C, and the holding time is 40min. The analysis results of the sample obtained after sintering: the warpage is about...

Embodiment 2

[0054] In this embodiment, the second metal layer on the surface of the ceramic substrate is still larger than the first metal layer. The thickness of the first metal layer is 40um, and the thickness of the second metal layer is 60um. Except for this, the same process as in Example 1 was used to produce a ceramic base, and analysis and evaluation were performed. The results are shown in Table 1.

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Abstract

The invention relates to a ceramic substrate and a manufacturing method thereof. The manufacturing method comprises the steps of printing a first metal layer on a first surface of the ceramic substrate having a conduction hole, and printing a second metal layer on a second surface opposite to the first surface, so that a conductive circuit is formed, a pad area is formed on the first surface, anda thickness of the second metal layer is greater than a thickness of the first metal layer; printing a welding flux layer on the first surface; attaching an encapsulation frame on the welding flux layer; and sintering, under a vacuum condition, a ceramic metal lining plate attached with the encapsulation frame. According to the ceramic substrate and the manufacturing method thereof, the residual stress caused by an asymmetric structure of a full plate is effectively reduced, and thus the warping degree of the ceramic substrate is effectively improved, and a rear-end client is convenient to perform work such as chip full-plate encapsulation and finished product cutting; and therefore, the product yield and efficiency are improved.

Description

technical field [0001] The invention relates to the field of substrate manufacturing and processing for mounting semiconductor devices, in particular to a ceramic base and a manufacturing method thereof. Background technique [0002] At present, the main technologies for making ceramic bases without dams are: thick film technology and thin film technology. Thick film technology is manufactured by transferring conductive paste, resistor paste and insulating material paste, etc. to the substrate by screen printing. The printed film is dried to remove volatile components, and then exposed to a higher temperature for sintering to activate the bonding mechanism and complete the bonding of the film to the substrate; thin film technology is a subtractive technology, the entire substrate is made of several metals The layer is deposited, and then a series of photolithography processes are used to etch away the unnecessary material. [0003] For the manufacture of ceramic bases with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/498H01L33/48H01L33/62
CPCH01L23/49805H01L23/49827H01L23/49838H01L33/48H01L33/62H01L21/4807H01L21/486H01L21/4864H01L2933/0033H01L2933/0066
Inventor 刘深王太保黄世东王顾峰胡士刚于岩
Owner ZHEJIANG TC CERAMIC ELECTRONICS
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