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A technology of epitaxial layer and epitaxial wafer, which is applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc., can solve the problems of epitaxial wafer antistatic ability, poor life and optical characteristics, and scrapping, so as to reduce the scrapping rate, The effect of solving industry problems
Active Publication Date: 2020-11-27
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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Abstract
Description
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Problems solved by technology
If it is directly extended from the interruption of the MQW layer, the crystal quality of InGaN material will deteriorate and the distribution of In components will be uneven, which will greatly deteriorate the voltage, antistatic ability, life and optical properties of the epitaxial wafer. Therefore, most LED epitaxial chip factories If the epitaxial growth reaches the MQW layer or is interrupted after the MQW layer, it will be directly scrapped
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Effect test
Embodiment 1
[0013] S1, the epitaxial wafer interrupted by the MQW layer at N 2 / H 2 / NH 3 (the flow rate of the three is 60L / min, 120L / min, 80L / min respectively), the temperature is raised from 50°C to 1160°C, and the heating time is 8 minutes. The MQW layer and the epitaxial layer after the MQW layer are baked off;
[0014] S2, entering the high-temperature n-type GaN growth stage for 5 minutes;
[0015] S3, re-entering the MQW growth stage under normal conditions until the end of the epitaxial layer growth.
Embodiment 2
[0017] S1, the epitaxial wafer interrupted by the MQW layer at N 2 / H 2 / NH 3 (The flow rate of the three is 20L / min, 80L / min, 60L / min respectively), the temperature is raised from room temperature to 1100°C, the heating time is 5 minutes, and the high temperature treatment is carried out, the detachment effect of the epitaxial layer occurs, and the previous MQW layer and the epitaxial layer after the MQW layer are baked off;
[0018] S2, entering the 15-minute high-temperature n-type GaN growth stage;
[0019] S3, re-entering the MQW growth stage under normal conditions until the end of the epitaxial layer growth.
Embodiment 3
[0021] S1, the epitaxial wafer interrupted by the MQW layer at N 2 / H 2 / NH 3 (The flow rates of the three are 150L / min, 180L / min, and 170L / min, respectively). In the atmosphere, the temperature was raised from room temperature to 1200°C, and the heating time was 20 minutes. After high-temperature treatment, the detachment effect occurred in the epitaxial layer, and the previous MQW layer and the epitaxial layer after the MQW layer are baked off;
[0022] S2, entering the high-temperature n-type GaN growth stage for 20 minutes;
[0023] S3, re-entering the MQW growth stage under normal conditions until the end of the epitaxial layer growth.
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Abstract
The invention belongs to the technical field of LED epitaxial process and discloses a novel epitaxial layer lengthening method. The method comprises a step of heating a MQW layer or an epitaxial waferwhose growth is interrupted after the MQW layer to the temperature of 1100 DEG C to 1200 DEG C in a mixed atmosphere of N2, H2 and NH3, wherein the temperature rise time is between 4 minutes and 20 minutes, maintaining the above high-temperature condition, performing high temperature treatment on the MQW layer or the epitaxial wafer whose growth is interrupted after the MQW layer such that the MQW layer or the epitaxial wafer whose growth is interrupted after the MQW layer undergoes a desorption effect, and removing the MQW layer and the epitaxial wafer after the MQW layer after baking, a step of entering a high temperature n-type GaN growth phase for 4 minutes to 20 minutes, and a step of entering into a MQW growth phase of a normal condition again until the end of the epitaxial layer growth. According to the lengthening method of the present invention, the voltage, antistatic ability, lifetime and optical characteristics of an elongated epitaxial wafer are maintained to be normal bygrowing the MQW layer again, the industry problem is solved, and the scrap rate of a MOCVD production line is reduced.
Description
technical field [0001] The invention belongs to the technical field of LED epitaxial technology, and relates to a method for re-extending the epitaxial layer after the growth of the epitaxial layer is interrupted, especially suitable for extending the epitaxial layer after commercial MOCVD downtime, improving the success rate of the extension and reducing the scrapping rate of the MOCVD production line. Background technique [0002] LED epitaxial chip factories use MOCVD machines to produce epitaxial wafers. During the operation of the MOCVD machine, power trips, insufficient water pressure, insufficient process gas, and machine failures and other phenomena lead to downtime of the MOCVD machine and interruption of epitaxial layer growth, resulting in a large amount of scrap loss. This kind of downtime is unpredictable, and it may occur in a single MOCVD or a large number of MOCVDs, which will bring tens of thousands or even hundreds of thousands of losses to LED epitaxial ch...
Claims
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Application Information
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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/67
CPCH01L21/67253H01L33/0075
Inventor 张雷城展望芦玲
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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