AlGaN-based ultraviolet detector and manufacturing method thereof
A technology for ultraviolet detectors and manufacturing methods, which is applied in the field of AlGaN-based ultraviolet detectors and its manufacture, and can solve problems such as high noise, low responsivity, and large dark current
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[0035] To avoid ambiguity, it should be noted that the light absorbing layer mentioned in this application mainly refers to the intrinsic AlGaN layer.
[0036] The advantages of making ultraviolet detectors with AlGaN-based semiconductor materials are as follows:
[0037] Compared with ultraviolet photomultiplier tubes and Si-based ultraviolet detectors, wide-bandgap semiconductor ultraviolet detectors have obvious advantages such as good chemical stability, good thermal conductivity, high electron saturation drift rate, low cost, and small size. In addition, since the bandgap width of the wide bandgap semiconductor material determines the detection light wave range of the photodetector, the larger the bandgap width, the more sensitive the detector is to ultraviolet light, and the lower the sensitivity to visible light and infrared light. It can be seen that the inhibition ratio is higher. AlGaN material is a direct wide bandgap material, which has obvious advantages in bandg...
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