A silicon carbide MOS gate-controlled thyristor

A thyristor, silicon carbide technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large forward conduction resistance and low P-type cathode injection efficiency

Active Publication Date: 2021-06-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a silicon carbide MOS gate-controlled thyristor for the problems of low injection efficiency of the P-type cathode and large forward conduction resistance of the current conventional silicon carbide MOS gate-controlled thyristor.

Method used

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  • A silicon carbide MOS gate-controlled thyristor
  • A silicon carbide MOS gate-controlled thyristor
  • A silicon carbide MOS gate-controlled thyristor

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Embodiment Construction

[0018] The present invention is described in detail below in conjunction with accompanying drawing

[0019] Such as figure 2 As shown, the silicon carbide MOS gate-controlled thyristor of the present invention has a cell structure including an anode structure, a gate structure, a drift region structure and a cathode structure; for a P-type silicon carbide MOS gate-controlled thyristor, its anode structure includes a P+ ohmic contact Region 8 and N+7 on its right side, and P+ ohmic contact region 8 and metal layer 9 on the upper surface of N+ region 7; the gate structure mainly includes N well region 5, P well region 6, and N well region The oxide layer 10 and the gate metal 14, the N+ region 7 and the P+ ohmic contact region 8 in the anode structure are within the P well region 6, the P well region 6 is inside the N well region 5, the gate metal 14 and the oxide layer 10 Covering the N+ region 7, the P well region 6 and the N well region 6; the drift region structure includes...

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Abstract

The invention relates to power semiconductor technology, in particular to a silicon carbide MOS gate-controlled thyristor. The present invention transforms the cathode region of conventional silicon carbide MCT, by adding a layer of N-IEB layer under the P+ field stop layer, because the doping concentration of the N-type injection enhanced buffer layer is low, the minority carriers in this region are improved Life and mobility, thereby increasing the minority carrier diffusion length in the cathode structure, thereby increasing the cathode injection efficiency. And because the built-in electric field will be generated due to the concentration difference between the N-type substrate and the N-type injection-enhanced buffer layer, its direction is directed from the N-type substrate to the N-type injection-enhanced buffer layer, preventing the minority carrier holes from being injected by the N-type enhanced buffer layer. Diffusion to the N-type substrate layer by layer, thereby reducing the minority carrier hole diffusion current, and thus increasing the cathode injection efficiency.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a silicon carbide MOS gate-controlled thyristor Background technique [0002] Pulse power technology has extremely important applications in the fields of national defense scientific research and high-tech, and now the scope of application is expanding to industrial and civilian fields. MOS gate-controlled thyristor is an important pulse power device used in pulse power technology. [0003] MOS Gate Controlled Thyristor (MOS Controlled Thyristor, referred to as MCT) is a hybrid power electronic device composed of a power MOSFET and a thyristor. The characteristic of injecting a large number of carriers into the drift region. Therefore, MCT has good conduction characteristics of thyristors and high dv / dt resistance, and has the advantages of high input impedance, low control power, simple drive circuit, high switching speed and low switching loss of MOSFET, so it is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/745
CPCH01L29/7455
Inventor 陈万军谯彬高吴昊张柯楠夏云刘超
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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