Laterally diffused metal oxide semiconductor field effect transistor

Abstract

Embodiments of the invention provide a laterally diffused metal oxide semiconductor field effect transistor, including: a body region located on the upper portion of a substrate; a drift region located on the upper portion of the substrate and be adjacent to the body region; and a grid electrode located on the body region and the drift region; a source electrode region located in the body region;a drain electrode region in the drift region; a first isolation region in the drift region between the source electrode region and the drain electrode region; and a top doping region under the first isolation region; a capacitor, located on a well; and a second isolation region in the well between the source electrode region and the capacitor; wherein, in a top view, the grid electrode is in a loop shape, and the drain electrode region is disposed on the inner side of the loop shape, the source electrode region is disposed on the outer side of the loop shape; wherein the loop shape has a gap,and the first isolation region is connected to the second isolation region at the gap, and the capacitor surrounds the grid electrode.

Description

technical field [0001] The embodiments of the present invention relate to a semiconductor technology, in particular to a laterally diffused metal oxide semiconductor field effect transistor. Background technique [0002] High-voltage semiconductor components are suitable for high-voltage and high-power integrated circuits. Conventional high voltage semiconductor devices include lateral diffused metal oxide semiconductor field effect transistors (lateral diffused metal oxide semiconductor, LDMOS). The advantage of high-voltage semiconductor components is that they are easily compatible with other processes and are cost-effective, so they are widely used in power supplies, power management, display driver IC components, communications, automotive electronics, industrial control and other fields. [0003] When the LDMOSFET is connected to an AC power source, a large amount of electrostatic charge may accumulate, and the electrostatic charge may flow at any two terminals to gen...

AI Technical Summary

Problems solved by technology

Electrostatic discharge currents, if not properly controlled, can burn integrated circuits and cause component damage

For example, if the electrostatic discharge current flows from the drain to the source of the device, it may also flow to the gate of the device, causing damage to the gate

[0004] In summary, although the existing LDMOS field effect transistors generally meet the needs, they are not satisfactory in all aspects, especially the electrostatic discharge current of LDMOS field effect transistors still needs to be further improved

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