Technology for plating silicon wafers with nickel silver

Abstract

The invention provides a technology for plating silicon wafers with nickel silver. The technology comprises the following steps of pretreatment: the surfaces of the silicon wafers are cleaned and aresubjected to atomic activation; primary nickel plating: the surfaces of the silicon wafers are plated with primary nickel; nickel sintering: nickel layers and silicon layers are combined; secondary nickel plating: the surfaces of the silicon wafers are plated with secondary nickel; and silver plating: the surfaces of the silicon wafers are plated with silver. The technology has the beneficial effects that the bonding force of the nickel layers and the silicon layers can be effectively increased through secondary nickel plating, oxidation of the nickel layers can be effectively prevented through silver plating, the bonding force of the silicon wafers and soldering paste can be higher through nickel silver plating, silver nitrate is used as a silver plating solution and is safer and more reliable in production, transportation and storage processes, the production cost is saved, and the nickel silver plating technology has the advantages of low production cost, high reliability and long service life of the silicon wafers.

Description

technical field [0001] The invention belongs to the technical field of silicon wafer production, in particular to a process for nickel-silver plating of silicon wafers. Background technique [0002] In the production process of silicon wafers in the existing technology, it is necessary to plate gold on the surface of the nickel layer to prevent the oxidation of the lower nickel layer. The main component of the gold plating solution currently used is potassium gold cyanide, and the cost of potassium gold cyanide itself is relatively high And it is highly toxic, transportation and storage all need strict supervision procedures, which is not conducive to operation, and there is a great potential safety hazard at the same time. Contents of the invention [0003] The problem to be solved by the present invention is to provide a nickel-silver plating process for silicon wafers which prevents the oxidation of the nickel layer, is less harmful and has low cost. [0004] In order ...

AI Technical Summary

Problems solved by technology

[0002] In the production process of silicon wafers in the existing technology, it is necessary to plate gold on the surface of the nickel layer to prevent the oxidation of the lower nickel layer. The main component of the gold plating solution currently used is potassium aurous cyanide, and the cost of potassium aurous cyanide itself is relatively high And it is highly toxic, transportation and storage require strict supervision procedures, which is not conducive to operation, and there are great safety hazards at the same time