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Copper-indium-gallium-selenium solar cell absorption lay, preparation method and solar cell

A technology for solar cells and copper indium gallium selenide, which is applied in the field of copper indium gallium selenide solar cells and solar cells, can solve the problems of low performance of CIGS solar cells and the like, and achieve the effect of improving conversion efficiency.

Pending Publication Date: 2019-01-25
上海祖强能源有限公司
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Problems solved by technology

[0004] However, the performance of CIGS solar cells prepared by traditional two-step selenization method is relatively low

Method used

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  • Copper-indium-gallium-selenium solar cell absorption lay, preparation method and solar cell
  • Copper-indium-gallium-selenium solar cell absorption lay, preparation method and solar cell
  • Copper-indium-gallium-selenium solar cell absorption lay, preparation method and solar cell

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Embodiment Construction

[0053] In order to make the purpose, technical solution and advantages of the present application clearer, a copper indium gallium selenium solar cell absorption layer, preparation method and solar cell of the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0054] See figure 1 , an embodiment of the present application provides a method for preparing an absorber layer of a copper indium gallium selenide solar cell, which includes the following steps:

[0055] S10 , preparing a copper-indium-gallium metal stack 200 on the surface of the back electrode layer 100 by magnetron sputtering to form a copper-indium-gallium prefabricated film 10 .

[0056] The back electrode layer 100 is deposited on the substrate. The substrate may be monocrystalline silic...

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Abstract

The invention relates to a preparation method of an absorption layer of a copper indium gallium selenium solar cell, comprising the steps of preparing a copper gallium indium metal stack on the surface of a back electrode layer by a magnetron sputtering method to form a copper indium gallium preformed film; Annealing the copper indium gallium preform film in a selenium atmosphere to form a copperindium gallium selenium preform absorption layer; Co-evaporation of selenium, indium and gallium is carry out on that copper-indium-gallium-selenium prefabricated absorption lay to form an absorptionlayer of the copper-indium-gallium-selenium solar cell. The copper-indium-gallium-selenium solar cell absorbing layer prepared by the method provided by the present application is combined with the upper buffer layer to facilitate obtaining the buried PN junction, thereby improving the conversion efficiency of the copper-indium-gallium-selenium solar cell.

Description

technical field [0001] The present application relates to the field of copper indium gallium selenide solar cells, in particular to a copper indium gallium selenium solar cell absorption layer, a preparation method and a solar cell. Background technique [0002] Copper indium gallium selenide (CIGS for short) thin film solar cell is the most promising solar cell of the new generation. CIGS solar cells have the advantages of high conversion efficiency, low cost, long life, good low-light performance, and strong radiation resistance. Since the 1990s, CIGS solar cells have been the thin-film solar cells with the highest conversion efficiency in the laboratory. In 2016, ZSW in Germany increased the efficiency of CIGS solar cell laboratory to 22.6%, which is relatively close to the conversion efficiency of crystalline silicon cells, and has great development prospects; in 2018, Solar frontier of Japan reported that the conversion efficiency of its CIGS solar cell had reached 22....

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0216H01L31/18
CPCH01L31/02167H01L31/0322H01L31/1876Y02E10/541Y02P70/50
Inventor 叶亚宽郭逦达赵树利
Owner 上海祖强能源有限公司
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