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Three-dimensional memory and method of forming the same

A memory and three-dimensional technology, which is applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of long manufacturing time of three-dimensional memory, etc., and achieve the effect of reducing mutual waiting time, reducing differences, and reducing differences in process time

Active Publication Date: 2020-07-14
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the manufacturing time of existing 3D memory is long

Method used

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  • Three-dimensional memory and method of forming the same

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Experimental program
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Embodiment Construction

[0026] As mentioned in the background, the manufacturing time of the three-dimensional memory is relatively long.

[0027] figure 1 It is a schematic diagram of the structure of a three-dimensional memory.

[0028] Please refer to figure 1 , forming a storage wafer 10, the formation method of the storage wafer 10 includes: providing a first substrate 100; forming a number of NAND strings 101 on the first substrate 100; forming a bit on a number of the NAND strings line 102; form peripheral device 20; connect memory wafer 10 to peripheral device 20, the bit line 102 is electrically connected to peripheral device 20, and the connection plane is A-A1.

[0029] In the above method, forming the storage wafer 10 includes not only forming the NAND string 101, but also forming the bit line 102, so that the manufacturing time of the storage wafer 10 is longer, and the manufacturing time of the peripheral device 20 is shorter, namely: The process time of the storage wafer 10 and the ...

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PUM

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Abstract

A three-dimensional memory and its forming method, wherein the forming method includes: forming a storage wafer, and the forming method of the storage wafer includes: providing a first substrate; forming several NAND strings on the first substrate; Forming a peripheral circuit wafer, the forming method of the peripheral circuit wafer includes: providing a second substrate; forming a number of peripheral devices on the second substrate; forming a number of bit lines on the peripheral device, the The bit lines are located on the surface of the peripheral circuit wafer, and are electrically connected to a plurality of the peripheral devices; the storage wafer is connected to the peripheral circuit wafer, and the plurality of bit lines are in one-to-one correspondence with the plurality of NAND strings connect. The method can reduce the manufacturing time of the three-dimensional memory.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a three-dimensional memory and a forming method thereof. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NAND flash memory, NAND flash memory can provide higher cell density, higher storage density, and faster writing and erasing speed. [0003] With the development of planar flash memory, the production process of semiconductors has made great progress. However, the current development of planar flash memory has encountered various challenges: physical limi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11573H01L27/11582H01L27/115
CPCH10B69/00H10B43/40H10B43/27
Inventor 霍宗亮朱继锋陈俊朱宏斌刘峻华子群肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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