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3D memory and for method thereof

A memory, three-dimensional technology, applied in the field of semiconductors, can solve the problems of long manufacturing time of three-dimensional memory, and achieve the effect of reducing mutual waiting time, reducing differences, and reducing the difference in process time.

Active Publication Date: 2019-01-22
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the manufacturing time of existing 3D memory is long

Method used

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  • 3D memory and for method thereof
  • 3D memory and for method thereof
  • 3D memory and for method thereof

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Experimental program
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Embodiment Construction

[0026] As mentioned in the background, the manufacturing time of the three-dimensional memory is relatively long.

[0027] figure 1 It is a schematic diagram of the structure of a three-dimensional memory.

[0028] Please refer to figure 1 , forming a storage wafer 10, the formation method of the storage wafer 10 includes: providing a first substrate 100; forming a number of NAND strings 101 on the first substrate 100; forming a bit on a number of the NAND strings line 102; form peripheral device 20; connect memory wafer 10 to peripheral device 20, the bit line 102 is electrically connected to peripheral device 20, and the connection plane is A-A1.

[0029] In the above method, forming the storage wafer 10 includes not only forming the NAND string 101, but also forming the bit line 102, so that the manufacturing time of the storage wafer 10 is longer, and the manufacturing time of the peripheral device 20 is shorter, namely: The process time of the storage wafer 10 and the ...

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Abstract

Disclosed are a three-dimensional memory and a forming method thereof, wherein the forming method comprises: forming a storage wafer, the forming method of the storage wafer comprising: providing a first substrate; Forming a plurality of NAND strings on the first substrate; A method for a peripheral circuit wafer include providing a second substrate; Forming a plurality of peripheral devices on the second substrate; Forming a plurality of bit lines on the peripheral device, the bit lines being located on the surface of the peripheral circuit wafer and electrically connected with the pluralityof peripheral devices; connecting a memory wafer with a peripheral circuit wafer, and connecting a plurality of bit lines with a plurality of NAND strings one-to-one correspondingly. The method can reduce the manufacturing time of the three-dimensional memory.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a three-dimensional memory and a forming method thereof. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NAND flash memory, NAND flash memory can provide higher cell density, higher storage density, and faster writing and erasing speed. [0003] With the development of planar flash memory, the production process of semiconductors has made great progress. However, the current development of planar flash memory has encountered various challenges: physical limi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11573H01L27/11582H01L27/115H10B43/40H10B43/27H10B69/00
CPCH10B69/00H10B43/40H10B43/27
Inventor 霍宗亮朱继锋陈俊朱宏斌刘峻华子群肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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