An ion implantation device for chip production

Abstract

The invention discloses an ion implantation device for chip production, comprising a box body, an ion source is fixed at the bottom of the left side of the box body, an ion extraction device is arranged above the ion source, and the ion extraction device comprises four incident plates; a first accelerator is arranged above the ion extractor, a mass analyzer is arranged above the first accelerator,and a second accelerator is arranged on the right side of the right opening. A focusing lens is arranged on that right side of the second accelerator, and an electrostatic chuck is arranged on the right side of the focusing lens; A main control device is fixedly arrange on that outer side of the front side wall of the box body, and an intelligent control chip is embed inside the main control device. The invention has reasonable structure design, effectively prolongs the life of the filament, strengthens the absorption of deviated ions, and makes the ion implantation more uniform and comprehensive. The intelligent control board can input the booking program to the intelligent control chip, and can view various important parameters through the display board, which can effectively improve the intelligence, accuracy and operability of the equipment.

Description

technical field [0001] The invention relates to an ion implantation device, in particular to an ion implantation device for chip production. Background technique [0002] Ion implantation is a standard technique for introducing conductivity-altering impurities into semiconductor wafers. In a beamline ion implanter, a dopant gas can be ionized in an ion source from which ions can be extracted and accelerated to form an ion beam of the desired energy, which can then be directed to a The front surface of the supported wafer. Ion implantation technology has recently been widely used in the field of chip production. [0003] Today's ion implantation equipment still has defects. The ion concentration inside the ion source is not uniform enough, which greatly shortens the life of the filament, affects production efficiency, and increases production costs; and the extraction effect of the extraction device is not good, and it cannot be accurately measured. Ion volume, which is no...

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Problems solved by technology

[0003] Today's ion implantation equipment still has defects. The ion concentration inside the ion source is not uniform enough, which greatly shortens the life of the filament, affects production efficiency, and increases production costs; and the extraction effect of the extraction device is not good, and it cannot be accurately measured. Ion volume, which is not a good solution to the problem of offset ions; and deposits formed on the hydrostatic chuck during ion implantation have an adverse effect on the clamping force, which cannot be effectively measured by today's equipment monitor

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