Electronic grade polysilicon reduction furnace base plate and reduction furnace

Abstract

The invention discloses an electronic grade polysilicon reduction furnace base plate. The electronic grade polysilicon reduction furnace base plate comprises a base plate, electrode rings which are formed by a plurality of electrodes, a gas inlet ring which is formed by a plurality of gas inlets, and a gas outlet ring which is formed by a plurality of gas outlets; the base plate is of a circular disc structure; the formed electrode rings, the gas inlet ring and the gas outlet ring are concentric circles which take the centre of the base plate as a circle centre; the electrode rings at least comprise a first electrode ring and a second electrode ring which are arranged in sequence from inside to outside; the gas inlet ring at least comprises a first gas inlet ring which is arranged betweenthe first electrode ring and the second electrode ring; the apertures of the gas inlets in the first gas inlet ring are not equal to one another completely. According to the reduction furnace base plate disclosed by the invention, the gas inlets with different apertures are distributed in the base plate at intervals, so that the flowing speed of a reactant gas into the furnace is inconsistent; anduniform gas flow distribution in the prior art is changed, high-low matched gas flow is formed, and a gas stagnation zone at the upper part of the furnace body is effectively reduced, so that the cauliflower-like material forming probability is reduced, the quality and the yield of polycrystalline silicon products are improved, and unit energy consumption is reduced.

Description

Technical field [0001] The invention relates to the technical field of polysilicon preparation devices, in particular to an electronic grade polysilicon reduction furnace chassis and a reduction furnace. Background technique [0002] With the global trend of saving energy and reducing carbon dioxide emissions, my country's polysilicon production has been in the ascendant in recent years. Polysilicon is a technical material for manufacturing solar cells for photovoltaic power generation. At the same time, single crystal silicon produced with electronic grade polysilicon as a raw material is the basic material of the electronic information industry and the raw material for the production of large-scale integrated circuits, semiconductor separation components, and power electronic devices. At present, more than 70% of polysilicon production processes in the world adopt the modified Siemens method. The so-called Siemens method, also known as the trichlorosilane hydrogen reduction m...

AI Technical Summary

Problems solved by technology

However, there are defects in the design of these two chassis structures, which may easily cause poor gas flow in the furnace, weak gas flow circulation in the furnace, and more gas stagnation areas at the bottom and top of the reduction furnace, resulting in uneven temperature distribution on the surface of the silicon core and deposition The rate is low, which directly leads to the low proportion of high-quality electronic-grade polysilicon in each batch of polysilicon, and the unit energy consumption of the product is very high.

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