Thin film transistor and its manufacturing method

Abstract

The invention relates to a method for preparing a thin film transistor, the method comprising: sequentially forming a gate and a gate insulating layer on the gate on a substrate; depositing a gate insulating layer at a first rate on the gate insulating layer The first hydrogenated amorphous silicon layer, the Si-H bond content in the first hydrogenated amorphous silicon layer is 25% to 97%; the second hydrogenated amorphous silicon layer is deposited at a second rate on the first hydrogenated amorphous silicon layer. In the amorphous silicon layer, the Si-H bond content in the second hydrogenated amorphous silicon layer is 45% to 99%, the second rate is greater than the first rate, and the thickness of the second hydrogenated amorphous silicon layer is less than the thickness of the first hydrogenated amorphous silicon layer. In this application, the first hydrogenated amorphous silicon layer and the second hydrogenated amorphous silicon layer are used at the same time, which can reduce the total content of Si-H bonds, ensure production efficiency, improve performance and take into account production capacity.

Description

technical field [0001] The invention relates to the display field, in particular to a thin film transistor and a preparation method thereof. Background technique [0002] With the development of technology in recent years, thin film transistor displays have gradually occupied a dominant position in the display field due to their low power consumption and excellent display picture quality. Generally, thin film transistor displays use amorphous silicon thin film transistors as switches. Amorphous silicon thin film transistors usually have the properties of large area uniformity, large capacity, and high display quality, and are key devices for large-scale active liquid crystal display devices. [0003] However, the hydrogenated amorphous silicon layer in the amorphous silicon thin film transistor is unstable, and it absorbs more energy when illuminated, and generates more electron-hole pairs than when it is not illuminated, which will cause a threshold voltage shift and cause...

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Problems solved by technology

[0004] Based on this, it is necessary to provide a thin film transistor and a preparation method thereof for the problem of instability of the hydrogenated amorphous silicon layer in the amorphous silicon thin film transistor

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