A method for manufacturing a high-frequency silicon capacitor

Abstract

The invention belongs to the technical field of semiconductor manufacturing and relates to a method for manufacturing a high-frequency silicon capacitor. The method includes etching a plurality of trenches on a substrate, forming an HfO2 dielectric layer by atomic deposition technology, depositing polycrystalline silicon on the surface of the HfO2 dielectric layer, etching to form vias, depositingan insulating layer, etching to form metal contact vias, and sputtering metal to form electrodes. The method of the invention adopts the latest atomic deposition technology to manufacture the HfO2 dielectric layer, so that the frequency characteristic of the silicon capacitor is superior to that of the traditional capacitor, the reliability is high, the capacitance precision of the capacitor is greatly improved, and the finished product rate is improved.

Description

technical field [0001] The invention relates to a method for a silicon capacitor, in particular to a method for manufacturing a high-frequency silicon capacitor, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] With the miniaturization of electronic products and the increase in communication speed, traditional capacitors cannot be packaged in advanced 3D packaging. More importantly, the operating frequency is limited, generally working below 10G, which cannot meet the needs of the 5G communication era. demand. [0003] Silicon capacitors are a new member of the capacitor family. The existing silicon capacitors use LPCVD to deposit ONO (silicon dioxide / silicon nitride / silicon dioxide) as their dielectric. It has mature technology and low dielectric constant. ONO dielectric The manufactured silicon capacitors have a low operating frequency, generally only up to a few megahertz, and because of its low operating frequency, its rel...

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Problems solved by technology

[0002] With the miniaturization of electronic products and the increase in communication speed, traditional capacitors cannot be packaged in advanced 3D packaging. More importantly, the operating frequency is limited, generally working below 10G, which cannot meet the needs of the 5G communication era. needs

[0003] Silicon capacitors are a new member of the capacitor family. The existing silicon capacitors use LPCVD to deposit ONO (silicon dioxide / silicon nitride / silicon dioxide) as their dielectric. It has mature technology and low dielectric constant. ONO dielectric Manufactured silicon capacitors have a low operating frequency, generally only up to a few megahertz. Due to its low operating frequency, its reliability is poor

The working frequency of the capacitor is determined by the polarization time of the capacitor medium. The ONO medium of a conventional silicon capacitor is a laminated structure, which is an amorphous ionic crystal with a relaxed structure. The relaxation polarization of electrons and ions takes a certain amount of time, so resulting in lower frequency

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