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Three-dimensional memory and its manufacturing method

A manufacturing method and memory technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as small channel current and affecting the operating performance of semiconductor devices

Active Publication Date: 2021-04-06
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0005] However, in the related art, in the three-dimensional memory of multi-channel three-dimensional NAND, limited by the manufacturing process, when a voltage is applied on the word line (WL), the current of the channel is relatively small, which seriously affects the operation performance of the semiconductor device

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  • Three-dimensional memory and its manufacturing method

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Embodiment Construction

[0059] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0060] It should be noted that the terms "first", "second" and the like herein are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0061]In order to increase storage capacity, multi-channel 3D NAND was produced. In multi-channel three-dimensional NAND, a memory (also called a semiconductor device) has a gate stack (also called a deck in English) structure. The stacked gate structure includes a lower stacked structure, an intermediate dielectric layer and an upper stacked structure arranged in sequence along the vertical direction. The lower channel column passes through the lower laminated structure, the conductive connection layer passes through the intermediate dielectric layer, and the upper channel column passes through the upper laminated structure. The lower channel column a...

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Abstract

The invention discloses a three-dimensional memory and a manufacturing method thereof. Wherein, the three-dimensional memory includes: a stacked gate structure, including a plurality of gates arranged at intervals; a channel structure passing through the stacked gate structure, and the channel structure includes sequentially along the stacking direction of the gates. The lower channel column, the conductive connection layer, and the upper channel column are set; the upper channel column includes: a channel layer, the lower end of which extends into the conductive connection layer and contacts the conductive connection layer; a memory layer, surrounding A part of the channel layer is located on the top surface of the conductive connection layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] With the development of science and technology, there are more and more portable electronic devices in people's lives, such as digital cameras, MP3 players, tablet computers and smart phones. Therefore, the non-volatile storage market has also grown rapidly. Due to its many advantages such as high integration density, low cost per bit, and high reliability, NAND occupies most of the non-volatile storage market. [0003] However, with the size of semiconductor devices getting smaller and smaller, the reliability and performance of NAND are getting lower and lower. That is to say, NAND is facing the bottleneck that the size of the two-dimensional structure cannot be further reduced. [0004] To improve the reliability and performance of NAND, three-dimensional NAND was created. In...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/1157H01L27/11582H10B43/35H10B43/27
CPCH10B43/35H10B43/27
Inventor 张若芳王恩博杨号号徐前兵胡禺石张富山
Owner YANGTZE MEMORY TECH CO LTD
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