A kind of end face coupler and preparation method thereof

Abstract

The invention discloses an end face coupler and a preparation method therefor, and the coupler comprises a silicon substrate; a buried oxide layer which is formed on an upper surface of the silicon substrate; top silicon which is formed in the buried oxide layer, and has first top silicon and second top silicon; silicon nitride waveguides formed on the top silicon, wherein the silicon nitride waveguides include a first silicon nitride waveguide and a second silicon nitride waveguide, wherein the central lines of the first silicon nitride waveguide and the second silicon nitride waveguide are located on the central line of the top silicon. The beneficial effects are that by growing a plurality of silicon nitride waveguides at different heights above the top silicon, a light field of a largeplaque size is realized, and the length of the longitudinal structure is reduced by combining the design of a longitudinal wedge structure, and finally a waveguide end face coupler with the high coupling efficiency is formed; the end face coupler is simple in fabrication process, is compatible with CMOS process, can be used for mass production, has low cost, and has a high industrial utilizationvalue.

Description

technical field [0001] The invention relates to the technical field of optical devices, in particular to an end face coupler and a preparation method thereof. Background technique [0002] Silicon photonics technology uses silicon as the optical medium, and uses CMOS (Complementary Metal Oxide Semiconductor, English full name Complementary Metal Oxide Semiconductor) technology for the development and integration of optical devices, which is expected to achieve low-cost, high-speed optical communication, and has broad market application prospects . How to efficiently realize the interconnection between the optical signal on the optical chip and the external optical signal has become one of the key technologies in silicon photonics technology. The mode spot size of the silicon-based single-mode waveguide is 0.4-0.5um, while the mode spot size of the single-mode fiber is 9-10um. There is a large mode spot size mismatch and effective refractive index mismatch between the two. ...

AI Technical Summary

Problems solved by technology

In response to this problem, a variety of end face couplers have been proposed in the world to achieve larger mold spot sizes, mainly including cantilever beam structures, coated polymer structures, three-dimensional wedge structures, etc., but these couplers are complicated to process. The preparation process of its corresponding structure is not compatible with the CMOS process, which is not conducive to large-scale promotion and application

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