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A kind of insulated gate bipolar transistor with quantum dot structure

A technology of bipolar transistors and quantum dots, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. Effect of tail current and buffer thickness

Active Publication Date: 2021-05-11
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to achieve the effective recombination of most holes in the N+ buffer layer, a thicker buffer layer (above 10 μm) is required, and the increase in the thickness of the buffer layer will lead to an increase in its conduction voltage drop

Method used

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  • A kind of insulated gate bipolar transistor with quantum dot structure
  • A kind of insulated gate bipolar transistor with quantum dot structure
  • A kind of insulated gate bipolar transistor with quantum dot structure

Examples

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Embodiment 1

[0026] An insulated gate bipolar transistor (IGBT) with a quantum dot structure, comprising: a drain 101, a P + GaN substrate 102, N-type GaN buffer layer 103, N-type InGaN / GaN quantum dot layer 104, N-type - GaN base region 105, P + Well 106, P base region 107, N + Contact region 108 , gate 109 , gate dielectric layer 110 and source 111 .

[0027] in:

[0028] The structure of the N-type quantum dot layer 104 is as follows image 3 As shown, a GaN layer 1041 and InGaN 1042 quantum dots are included.

[0029] The InGaN quantum dots are uniformly distributed, with a size of 5 nm and a density of 5×10 9 cm -2 .

[0030] The N-type buffer layer 103 has a thickness of 5 μm, and the N-type InGaN / GaN quantum dot layer 104 has a thickness of 100 nm, N - The thickness of the base region 105 is 30 μm.

[0031] The substrate 102 is P + GaN substrate.

[0032] The N - The base region 105 and the N-type quantum dot layer 104 are doped with Si, and the electron concentration ...

Embodiment 2

[0037] An insulated gate bipolar transistor (IGBT) with a quantum dot structure, comprising: a drain 101, a P + Si substrate 102, N-type Si buffer layer 103, N-type Ge / Si quantum dot layer 104, N - Si base region 105, P + Well 106, P base region 107, N + Contact region 108 , gate 109 , gate dielectric layer 110 and source 111 .

[0038] in:

[0039] The structure of the N-type quantum dot layer 104 is as follows Figure 4 As shown, a Si layer 1043 and Ge1044 quantum dots are included.

[0040] The Ge quantum dots are randomly distributed, with a size of 5 nm and a density of 5×10 9 cm-2 .

[0041] The thickness of the N-type buffer layer 103 is 5 μm, the thickness of the N-type Ge / Si quantum dot layer 104 is 100 nm, and the thickness of N - The thickness of the base region 105 is 30 μm.

[0042] The substrate 102 is P + Si substrate.

[0043] The N - The base region 105 and the N-type quantum dot layer 104 are doped with P, and the electron concentration therein i...

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Abstract

The invention discloses an insulated gate bipolar transistor with a quantum dot structure. Including from bottom to top: drain, P + Substrate, N-type buffer layer, N-type quantum dot layer, N ‑ Base, P + Well, P base, N + Contact area, gate, gate dielectric layer and source. Since quantum dots (zero-dimensional materials) have a larger forbidden band width than high-dimensional materials, and the forbidden band width of quantum dots is strongly dependent on their size, and the quantum dots have different sizes, which will naturally form potential energy fluctuations , resulting in a large number of localized regions of carriers. When the device is turned off, the remaining carriers are localized in the quantum dot layer, which can effectively reduce the tail current and buffer layer thickness of the IGBT device, thereby reducing the switching time and conduction of the device pressure drop.

Description

technical field [0001] The invention relates to the technical field of semiconductor power electronic devices, in particular to an insulated gate bipolar transistor with a quantum dot structure. Background technique [0002] Insulated-gate bipolar transistors (IGBTs), as the core electronic components in modern power electronic circuits, are widely used in various fields such as transportation, communications, household appliances, and aerospace. [0003] IGBT is a new type of power electronic device composed of insulated field effect transistor (MOSFET) and bipolar junction transistor (BJT), which can be equivalent to a MOSFET driven by BJT. The IGBT combines the MOSFET structure and the working mechanism of the BJT. It not only has the advantages of easy driving of the MOSFET, low input impedance, and fast switching speed, but also has the advantages of large on-state current density, low conduction voltage, low loss, and good stability of the BJT. Therefore, IGBT devices...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/12H01L21/331
CPCH01L29/0684H01L29/122H01L29/66325H01L29/7393
Inventor 庄喆姜海涛张雄崔一平
Owner SOUTHEAST UNIV
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