Klystron TESLA theory input cavity coupling term processing method

A klystron and input chamber technology, applied in klystrons, electron tubes with velocity/density modulation electron flow, electrical digital data processing, etc., can solve problems that have not been clearly raised

Active Publication Date: 2018-11-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the existing literature on TESLA, there is no clear proposal of C k,s and V + The specific treatment method

Method used

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  • Klystron TESLA theory input cavity coupling term processing method
  • Klystron TESLA theory input cavity coupling term processing method
  • Klystron TESLA theory input cavity coupling term processing method

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Embodiment Construction

[0066] Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples.

[0067] The example adopts the S-band klystron input cavity to carry out the calculation of the electromagnetic field. Various size parameters such as figure 2 As shown in (b), the detailed size parameters are shown in Table 1.

[0068] Table 1 Klystron size parameters (unit: mm)

[0069] r a

r b

r

h

d

u

w

b

4.00

6.00

31.20

15.50

7.00

4.00

124.00

43.48

[0070] r in table 1 a Represents the diameter of the electron beam channel, r and h represent the diameter and height of the double-entry resonator respectively, d represents the length of the coupling gap, u represents the length of the coupling hole, and the coupling hole corresponds to the broadside k of the waveguide a =36.27mm, narrow side k b =18.26mm, wide side a of the input waveguide=86.36mm, narrow side b...

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Abstract

The invention belongs to the simulation field of klystrons in the microwave electric vacuum field, and particularly relates to a klystron TESLA theory input cavity coupling term processing method, which can quickly and accurately calculate external waveguide characteristic impedance Zwg related to an input and output coupling term in the TESLA theory model, a coupling coefficient Ck,s and an inputwaveguide operation mode voltage amplitude coefficient V+. Through introducing a corrected relational expression between input power P and the input waveguide operation mode voltage amplitude coefficient V+, the existing electromagnetic simulation software is used to carry out one-time intrinsic and one-time driving mode simulation to realize quick and accurate simulation on an electromagnetic field in a high-frequency resonant cavity of the klystron under any input power by the TESLA theory, and the difficulties that the coupling coefficient Ck,s is hard to calculate and the V+ is hard to determine can be overcome. Quick and accurate simulation on the electromagnetic field in the high-frequency resonant cavity of the klystron under any input power by the TESLA theory can be realized.

Description

technical field [0001] The invention belongs to the klystron simulation field in the field of microwave electric vacuum. In particular, it relates to a method for processing a klystron TESLA theory input cavity coupling item. Background technique [0002] The klystron amplifier is the main device with high power and high gain in the current microwave frequency band. It directly applies microwave energy in particle accelerators, controllable thermonuclear fusion plasma heating devices, microwave weapons, space microwave energy transmission, and industrial microwave heating and processing systems. The occasion occupies a dominant position, and has also been widely used in meteorological and radar navigation, communication, television broadcasting and other applications. [0003] At present, the klystron mainly uses large-scale commercial software such as CST, HFSS, MAGIC and some special injection-wave interaction simulation software for klystron to carry out computer simulat...

Claims

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Application Information

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IPC IPC(8): H01J25/10G06F17/50
CPCG06F30/20H01J25/10
Inventor 朱小芳巩进杰胡玉禄胡权杨中海李斌
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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