Near-infrared narrow-band filter piece and infrared imaging system
A narrow-band filter, near-infrared technology, applied in the direction of filters, optics, optical components, etc., can solve the problems of poor imaging effect of near-infrared filters, and reduce the total thickness of the film layer, the total coating time, and hardness. High and good wear resistance
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Embodiment 1
[0073] The first high-refractive-index film layer 121 and the first low-refractive-index film layer 122 are alternately plated to form an IR film system of a near-infrared narrow-band filter. In this embodiment, the first high refractive index film layer 121 is made of hydrogenated silicon (Si:H) material, and the first low refractive index film layer 122 is made of silicon nitride (i.e. SiN) material. m The form is arranged alternately to form the filter IR band-pass film system; wherein, L represents the height of the first low refractive index film layer 122 with a reference wavelength thickness of 1 / 4, and H represents the first high refractive index film layer 121 with a reference wavelength of 1 / 4 The height of the wavelength thickness, m represents the number of alternate plating.
[0074] In this embodiment, within the range where the incident angle changes from 0° to 10°, the central wavelength shift range of the passband band is between 0.5nm and 1.5nm, and every tim...
Embodiment 2
[0088] The first high-refractive-index film layer 121 and the first low-refractive-index film layer 122 are alternately plated to form an IR film system of a near-infrared narrow-band filter. In this embodiment, the first high refractive index film layer 121 is made of hydrogenated silicon (Si:H), and the first low refractive index film layer 122 is made of silicon nitride (i.e., Si:H). 3 N 4 ) material to L(HL) m The form is arranged alternately to form the filter IR band-pass film system; wherein, L represents the height of the first low refractive index film layer 122 with a reference wavelength thickness of 1 / 4, and H represents the first high refractive index film layer 121 with a reference wavelength of 1 / 4 The height of the wavelength thickness, m represents the number of alternate plating.
[0089] In this embodiment, within the range where the incident angle changes from 0° to 10°, the central wavelength shift range of the passband band is between 0.5nm and 1.5nm, a...
Embodiment 3
[0103] The first high-refractive-index film layer 121 and the first low-refractive-index film layer 122 are alternately plated to form an IR film system of a near-infrared narrow-band filter. In this embodiment, the first high refractive index film layer 121 is made of hydrogenated silicon (Si:H) material, and the first low refractive index film layer 122 is made of mixed materials, such as silicon nitride (SiN) and silicon dioxide (SiO 2 ) hybrid material, or silicon nitride (i.e. SiN and Si 3 N 4 ) mixed material, in L(HL) m The form is arranged alternately to form the filter IR band-pass film system; wherein, L represents the height of the first low refractive index film layer 122 with a reference wavelength thickness of 1 / 4, and H represents the first high refractive index film layer 121 with a reference wavelength of 1 / 4 The height of the wavelength thickness, m represents the number of alternate plating.
[0104] In this embodiment, within the range where the incident...
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