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P type SnS single-crystal material and preparation method thereof

A single crystal material, single temperature zone technology, applied in polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problem of low thermoelectric performance ZT, reduced carrier mobility, limited electrical performance improvement, etc. problems, to achieve the effect of optimizing electrical performance, improving electrical transport performance, and low cost

Inactive Publication Date: 2018-11-20
BEIHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the P-type SnS thermoelectric materials prepared by the above methods are all polycrystalline. Although doping can increase the carrier concentration, the existence of grain boundaries seriously reduces the carrier mobility, which limits the improvement of its electrical properties. Resulting in lower thermoelectric performance figure of merit ZT

Method used

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  • P type SnS single-crystal material and preparation method thereof
  • P type SnS single-crystal material and preparation method thereof
  • P type SnS single-crystal material and preparation method thereof

Examples

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preparation example Construction

[0026] The invention provides a method for preparing a P-type SnS single crystal material, comprising the following steps:

[0027] (1) Sn powder, S powder and Na block are mixed and batched to obtain a mixed material;

[0028] (2) putting the mixed material in the step (1) into a quartz tube, and vacuumizing;

[0029] (3) Place the quartz tube filled with the mixed material obtained in the step (2) in a vertical tube furnace with a single temperature zone, and carry out a synthesis reaction to obtain a P-type SnS single crystal material.

[0030] The invention mixes Sn powder, S powder and Na block to obtain mixed material. In the present invention, the molar ratio of the Sn powder, S powder and Na block is preferably Sn:S:Na=1-x:1:x, 0≤x≤0.03. In the present invention, the mass purity of the Sn powder and the S powder is preferably independently ≥99.99%, and the mass purity of the Na block is preferably ≥99.999%. In the present invention, the Na, as an effective P-type do...

Embodiment 1

[0046] (1) Sn and S powders with a purity greater than 99.99% and Na blocks with a purity greater than 99.999% are mixed according to a molar ratio of Sn:Na:S=0.97:0.03:1 to obtain a mixed material;

[0047] (2) Put the mixed material obtained in step (1) into a small quartz tube (10 mm in diameter) with a pointed front end, and vacuumize the small quartz tube with the mixed material until the vacuum degree is less than 10 -2 Pa, filled with argon, and then evacuated to a vacuum degree of less than 10 -3 Pa, a small quartz tube sealed with a flame;

[0048] (3) Place the small quartz tube of step (2) gained in the large quartz tube with a diameter greater than 10mm, according to the method of step (2), carry out secondary vacuum treatment and sealing treatment to the large quartz tube with small quartz tube;

[0049] (4) put the large quartz tube of step (3) gained into the vertical tube furnace of single temperature zone, make the upper end and the bottom tip of the large qu...

Embodiment 2～4

[0052] The atomic molar ratios of Sn, Na and S in Examples 2-4 are 0.98:0.02:1, 0.99:0.01:1 and 1:0:1 respectively, and the other steps are the same as those in Example 1. Table 1 shows the performance test parameters of the SnS single crystals prepared in Examples 1-4.

[0053] The properties of the SnS single crystal material prepared in Table 1 Examples 1-4

[0054]

[0055] The above Examples 1-3 are Na-doped high-performance P-type SnS crystals prepared by the preparation method provided by the present invention, and Example 4 is an intrinsic P-type SnS crystal.

[0056] As can be seen from Table 1, the carrier mobility of the P-type SnS crystal prepared by the present invention is relatively high, and it is polymorphic SnS (7-12cm 2 ·V -1 ·s -1 ) 10 to 20 times; moreover, high-performance P-type SnS crystals can be obtained through Na doping, and its average ZT value and theoretical efficiency are significantly better than those of intrinsic P-type SnS crystals.

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Abstract

The invention provides a preparation method of a P type SnS single-crystal material. By using a vertical temperature gradient single temperature area solidification method to prepare the P type SnS single-crystal material, the influence of the existence of a crystal boundary on a migration rate of the P type SnS single-crystal material is effectively eliminated, the carrier mobility of an interlayer height is reasonably utilized, and the electrical transport property is obviously improved; and as Na is used as a valid P type dopant, the electrical property is optimized. The P type SnS single-crystal material prepared by the preparation method of the P type SnS single-crystal material, provided by the invention, has the advantages that the carrier mobility reaches up to 156 cm2.V(-1).s(-1),the mean ZT value reaches up to 0.57, and the theoretical heat-to-electric conversion efficiency is 6.8%-10.4%. Compared with an existing P type polycrystal SnS thermoelectric material, the P type SnS single-crystal material prepared by the preparation method of the P type SnS single-crystal material, provided by the invention, has the advantage that the conversion efficiency of the P type SnS crystal thermoelectric material is obviously enhanced; and the P type SnS single-crystal material prepared by the preparation method of the P type SnS single-crystal material, provided by the invention,has large dimension and can be produced and applied on a large scale.

Description

technical field [0001] The invention relates to the technical field of energy materials, in particular to a P-type SnS single crystal material and a preparation method thereof. Background technique [0002] Due to the increasing demand for fossil energy fuels and the increasingly prominent environmental pollution problems, the diversified development and efficient utilization of energy have become an important technical approach to solve these problems. Thermoelectric energy conversion technology is a technology that realizes mutual conversion of heat energy and electric energy based on the thermoelectric effect, and as a green energy technology is attracting more and more attention. For example, thermoelectric energy conversion technology has important applications in technical fields such as industrial waste heat power generation, automobile exhaust waste heat power generation, solar photovoltaic composite power generation, micro mobile energy, semiconductor refrigeration ...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B11/00H01L35/16H01L35/34
CPCC30B11/00C30B29/46H10N10/852H10N10/01
Inventor 赵立东何文科
Owner BEIHANG UNIV
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