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Red light quantum dot as well as synthesis method and quantum dot light emitting diode thereof

A synthesis method and quantum dot technology, applied in luminescent materials, chemical instruments and methods, nano optics, etc., can solve the problems that red light quantum dots cannot have both photobleaching resistance and high stable luminous efficiency, and achieve broad commercial application prospects , Reduce equipment requirements and the effect of preparation costs

Active Publication Date: 2018-11-20
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present invention is to provide a red light quantum dot, its synthesis method and quantum dot light-emitting diode, to solve the problem that the red light quantum dot in the prior art cannot have photobleaching resistance, high stability and high luminous efficiency

Method used

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preparation example Construction

[0025] In a typical implementation of the present application, a synthesis method of quantum dots is provided. The synthesis method includes: step S1, providing a solution containing CdSe quantum dot cores; step S2, epitaxially growing multiple Zn x Cd 1- x S monolayer shell, in the direction away from the CdSe quantum dot core, each Zn x Cd 1-x The x of the S single-layer shell gradually increases from 0 and the maximum value is between 0.5 and 0.8, and the CdSe / Zn-containing x Cd 1-x The system of S quantum dots; optional step S3, to the CdSe / Zn of step S2 x Cd 1-x The S quantum dots continue to coat the ZnS shell.

[0026] By controlling the composition in the shell layer of the CdSe quantum dot core to gradually transition from CdS to CdZnS or ZnS, it is ensured that the quantum dots can maintain a good lattice matching degree throughout the coating process, and the quantum dots are guaranteed to be stable during the coating process. It can be maintained at the lev...

Embodiment 1

[0059] Example 1: CdSe / Zn 0→0.75 Cd 1→0.25 Synthesis of S quantum dots

[0060] Take the first exciton peak UV=555nm, 30nmol CdSe nucleus, mix with 10ml oleylamine (OAe) and 10ml octadecene (ODE), after deoxygenation by nitrogen at room temperature, raise the temperature of the system to 300°C to form CdSe A solution of quantum dot nuclei;

[0061] After the temperature of the above solution rises to 300°C, start to drop (CdOA 2 +OT) precursor, and at a rate of 1ml every 1h, reduce (CdOA 2 +OT) precursor addition amount, namely: (CdOA 2 +OT) The initial rate of addition of the precursor is 3ml / h, after 1h, the rate of addition is 2ml / h, after 2h, the rate of addition is 1ml / h, and so on until the end of the reaction. (CdOA 2 +OT) precursor was added dropwise for 3 hours in total, and the amount added was 6ml. The corresponding three stages add cadmium-sulfur mixed precursor: the molar ratio of CdSe quantum dot core is 20*10 3 :1,13.3*10 3 :1, 6.7*10 3 :1.

[0062] (...

Embodiment 2

[0067] Example 2: CdSe / Zn 0→0.67 Cd 1→0.33 Synthesis of S quantum dots

[0068] Take the first exciton peak UV=555nm, 30nmol CdSe nucleus, mix with 10ml oleylamine (OAe) and 10ml octadecene (ODE). A solution of quantum dot nuclei;

[0069] After the temperature of the above solution rises to 300°C, start to drop (CdOA 2 +OT) mixed precursors, added dropwise for a total of 3 hours, and the amount added was 9ml. The corresponding three stages add cadmium-sulfur mixed precursor: the molar ratio of CdSe quantum dot core is 20*10 3 :1, 20*10 3 :1, 20*10 3 :1.

[0070] (ZnOA 2 +OT) precursor to (CdOA 2 +OT) precursor dropwise added 1h after the dropwise addition, (ZnOA 2 +OT) precursor initial rate of 3ml / h, and every 0.5h, increase the rate of 1ml, increase (ZnOA 2 +OT) precursor addition amount, namely: (ZnOA 2 +OT) The initial drop rate of the precursor is 3ml / h, the drop rate is 4ml / h after 0.5h, and the drop rate is 5ml / h after 1h, and so on until the end of the rea...

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Abstract

The invention provides a red light quantum dot as well as a synthesis method and a quantum dot light emitting diode thereof. The synthesis method comprises the following steps: S1, providing a solution with a CdSe quantium dot core; S2, carrying out epitaxial growth on the CdSe quantium dot core so as to obtain a plurality of ZnxCdl-xS single-layer shells, gradually increasing x of different ZnxCdl-xS single-layer shells from 0 till a maximum number within of 0.5-0.8 in a direction far away from the CdSe quantium dot core so as to obtain a system with CdSe / ZnxCd1-xS quantum dots; and optionalS3, continuously coating the CdSe / ZnxCd1-xS quantum dots of the step S2 with a ZnS shell layer. By controlling the components in the shell layers to be gradually transited to CdZnS or ZnS from CdZnS,a good lattice matching rate can be ensured, the quantum dots can be maintained at a single index dispersion level, and the quantum dots with high optical quality, high photobleaching resistance and high air stability can be finally prepared.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to a red light quantum dot, a synthesis method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum Dot (QD) is a semiconductor nanocrystal with a size usually between 1 and 100 nm and having a quantum confinement effect. Due to its special optical and photoelectric properties, such as extremely broad absorption spectrum, very narrow emission spectrum, and high luminous efficiency, by adjusting the size of quantum dots to adjust the corresponding band gap of quantum dots, its electrical properties can be significantly adjusted. , optical properties, etc. Quantum dots have broad application prospects in various components such as light-emitting components or photoelectric conversion components, and have been used in many fields such as display, lighting, solar energy, anti-counterfeiting, and bioluminescent marking. [0003] However, in the actu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00H01L33/50
CPCB82Y20/00B82Y30/00C09K11/025C09K11/883H01L33/502
Inventor 陈小朋邵蕾谢阳腊
Owner NANJING TECH CORP LTD
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