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Back cavity slot dual-frequency millimeter wave antenna based on substrate integrated waveguide (SIW)

A substrate-integrated waveguide and millimeter-wave antenna technology is applied in the direction of slot antenna, antenna grounding switch structure connection, radiation element structure, etc. It can solve the problems of low antenna gain and efficiency, narrow bandwidth of millimeter-wave dual-band antenna, etc., and achieve Broaden the bandwidth, overcome the effect of complex antenna feeding structure and simple feeding structure

Active Publication Date: 2018-11-16
XIDIAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art, and propose a cavity-backed slot dual-frequency millimeter-wave antenna based on SIW technology, which is used to solve the problems of narrow bandwidth, low antenna gain and low efficiency of the existing millimeter-wave dual-frequency antenna question

Method used

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  • Back cavity slot dual-frequency millimeter wave antenna based on substrate integrated waveguide (SIW)
  • Back cavity slot dual-frequency millimeter wave antenna based on substrate integrated waveguide (SIW)
  • Back cavity slot dual-frequency millimeter wave antenna based on substrate integrated waveguide (SIW)

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Embodiment 1

[0029] refer to figure 1 and figure 2 , a cavity-backed slot dual-frequency millimeter-wave antenna based on substrate integrated waveguide SIW, including a radiation layer 1, a feed layer 2 and a composite conversion structure 3, the radiation layer 1 is composed of a first metal cladding layer 11 and a first rectangular Dielectric plate 12; the first metal cladding 11 is printed on the upper surface of the first rectangular dielectric plate 12; the feed layer 2 includes a second rectangular dielectric plate 22, a second upper metal cladding 21 and a second The lower metal cladding layer 23; the composite conversion structure 3 is etched at the edge of the short side of the lower surface of the second lower metal cladding layer 23 of the second rectangular dielectric plate 22;

[0030] The first rectangular dielectric plate 12 is provided with a first metallized through hole 13 penetrating through the first metal coating 11 and the first rectangular dielectric plate 12, and...

Embodiment 2

[0040] The structure of this embodiment is the same as that of Embodiment 1, only the following parameters have been adjusted:

[0041] The first metallized through holes 13 form a circularly distributed substrate integrated waveguide SIW resonator diameter D = 12.8mm; the two parallel rectangular radiation slots 111 have a distance d x =2.3mm, the length L of the rectangular radiation slot 111 x =0.9mm, the width is L y =9mm; the opening direction of the second metallized through-hole 24 in the gradual "U" distribution along the x-axis is the distance m between the centers of two adjacent metallized through-holes 1 = 4mm; the distance between the bottom of the rectangular coupling slit 211 and the center of the bottom of the second metallized through hole 24 with a gradual "U" distribution is m=0.7mm, and the length of the rectangular coupling slit 211 is S l =3.7mm, the width is S w = 0.25 mm.

Embodiment 3

[0043] The structure of this embodiment is the same as that of Embodiment 1, only the following parameters have been adjusted:

[0044] The first metallized through hole 13 forms a circularly distributed substrate-integrated waveguide SIW resonator diameter D = 13.2mm; the distance between the two parallel rectangular radiation slots 111 is d x =2.5mm, the length L of the rectangular radiation slot 111 x =1.1mm, the width is L y =9.4mm; the opening direction of the second metallized through-hole 24 with gradual "U" distribution along the x-axis is the distance m between the centers of two adjacent metallized through-holes 1 = 4.2mm; the distance between the bottom of the rectangular coupling slit 211 and the center of the bottom of the second metallized through hole 24 distributed in a gradual "U" shape is m=0.8mm, and the length of the rectangular coupling slit 211 is S l =3.9mm, the width is S w = 0.35mm.

[0045] Below in conjunction with simulation experiment, technica...

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Abstract

The invention provides a back cavity slot antenna dual-frequency millimeter wave antenna based on a substrate integrated waveguide (SIW). The antenna comprises a radiation layer, a feed layer and a composite conversion structure, wherein the radiation layer is composed of a first metal coating and a first rectangular dielectric plate, the first metal coating is etched with two mutually parallel rectangular radiation slots, the first rectangular dielectric plate is provided with first metalized through holes for forming a circular SIW resonant cavity; the feed layer is composed of a second rectangular dielectric plate, a second upper metal coating and a second lower metal coating, the second rectangular dielectric plate is provided with second metalized through holes distributed in a gradually changing U-shaped manner so as to form a substrate integrated waveguide, and the second upper metal coating is etched with a rectangular coupling slot for slot coupling feed. The back cavity slotantenna dual-frequency millimeter wave antenna realizes the performance of millimeter wave dual-band radiation, and solves a technical problem that the dual-frequency millimeter wave antenna in the prior art is narrow in impedance bandwidth, low in antenna radiation gain and efficiency and complex in feed structure.

Description

technical field [0001] The invention belongs to the technical field of antennas, in particular to a cavity-backed slot dual-frequency millimeter-wave antenna based on a substrate integrated waveguide (SIW) in the field of cavity-backed slot antennas, which can be used in millimeter-wave wireless communication systems. Background technique [0002] Traditional 4G wireless communication systems generally use planar printed antennas, but planar printed antennas have low gain and antenna efficiency and are not suitable for millimeter wave communications. Substrate-integrated waveguide SIW has the advantages of low loss, simple fabrication and easy planar circuit integration, and has a broader application prospect in millimeter-wave antennas. Compared with 4G communication, 5G has extremely high transmission rate, higher channel capacity and power capacity, and extremely low transmission delay. Obviously, the traditional planar printed antenna can no longer meet the needs of nex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/38H01Q1/50H01Q13/18
CPCH01Q1/38H01Q1/50H01Q13/18
Inventor 洪涛赵哲民高雨辰张帅王兴龚书喜
Owner XIDIAN UNIV
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