Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device including chamber unit

An engineering device and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, discharge tubes, etc., can solve problems such as low compatibility and difficult maintenance of modules inside the cavity, and achieve convenient maintenance and real-time efficiency. , the effect of the upgrade

Inactive Publication Date: 2018-10-23
ALLIED TECHFINDERS +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For example, even if it is equally applicable to etching process, there is a problem that the compatibility between the etching process device of dielectric thin film and the etching process device of conductive film is very low
[0008] Furthermore, when the chuck unit is exposed for maintenance of the chuck unit, it is necessary to insert a tool from the upper side of the chamber and maintain the chuck unit by an operator after removing all the modules connected to the chamber , so it will lead to very difficult problems in the maintenance of the internal modules of the cavity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device including chamber unit
  • Semiconductor device including chamber unit
  • Semiconductor device including chamber unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Next, embodiments to which the present invention is applied will be described in detail with reference to the accompanying drawings. In this process, the size, shape, etc. of the constituent elements shown in the drawings may be exaggerated for clarity and convenience of description. In addition, the terms specifically defined in consideration of the process and action of the present invention may be different due to the intention of the user or the practice. Therefore, the above-mentioned terms should be defined based on the content in the entire specification.

[0040] figure 1 It is a schematic diagram illustrating a semiconductor process device to which the present invention is applied.

[0041] A semiconductor engineering device applicable to the present invention can include a process chamber 100 and a chuck unit 200 .

[0042] The chuck unit 200 can be arranged in the inner space 109 of the cavity unit 100 . The chuck unit 200 can support a substrate processed ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor processing device according to the present invention includes a process chamber having an inner space in which plasma is generated and a chuck unit disposed in the inner space and supporting a substrate processed by the plasma. The process chamber includes a first chamber portion and a second chamber portion that are opened from each other, and when the first chamber portion and the second chamber portion are closed together, the process chamber is provided with the inner space in which the plasma is generated. When the first chamber portion and the second chamber portion are opened from each other, the chuck unit is exposed to outside.

Description

technical field [0001] The present invention relates to a semiconductor engineering apparatus equipped with a chamber unit that standardizes vacuum chambers for processing substrates such as wafers. Background technique [0002] Semiconductor process equipment used to perform surface treatment for forming fine patterns on the surface of semiconductor wafers can be divided into photolithography (Photo) process equipment for forming patterns designed on masks, and The etching (etching) engineering device for removing the graphic film on the wafer, the deposition (Deposition) engineering device for laminating and forming a graphic film on the wafer, etc. [0003] The semiconductor engineering devices used to perform different processes have in common that they all need to be equipped with a chamber for processing wafers, a vacuum module for forming a vacuum in the chamber, and a vacuum module for injecting into the chamber. A chuck module for supporting the wafer, a frame modu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/6719H01L21/67126H01J37/32715H01J37/32743H01J37/32899H01J37/32458H01L21/3065H01L21/67184H01L21/67739H01L21/67742H01L21/67772H01L21/683H01L21/67069H01J2237/334
Inventor 徐基源
Owner ALLIED TECHFINDERS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com