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Wavelength-tunable semiconductor laser

A technology of semiconductors and lasers, which is applied in the direction of semiconductor lasers, lasers, and devices for controlling laser output parameters. It can solve the problems that semiconductor lasers do not have wavelength tunable functions, and achieve selective output, high-speed modulation, and 3dB increase The effect of bandwidth

Active Publication Date: 2018-10-19
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned technical problem that the semiconductor laser does not have the wavelength tunable function, the present invention provides a wavelength tunable semiconductor laser,

Method used

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  • Wavelength-tunable semiconductor laser

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Embodiment 1

[0046] A wavelength tunable semiconductor laser provided by this embodiment, such as figure 1 As shown, it includes: lower electrode 1, substrate 2, lower separation confinement layer 3, lower waveguide layer 4, active layer 5, upper waveguide layer 6, upper separation confinement layer 7, capping layer 8, current Isolation layer 9, upper electrode 10.

[0047] The lower waveguide layer 4, the active layer 5 and the upper waveguide layer 6 constitute the central region of the optical confinement layer of the semiconductor laser, and the lower separation confinement layer 3 and the upper separation confinement layer 7 constitute the cladding layer of the semiconductor laser.

[0048]The active layer 5 adopts a multilayer quantum well structure in which strained quantum wells and strained quantum barriers are alternately mixed. Preferably, the active layer 5 can be grown with different components of the same material of InGaAsP or AlInGaAs, or grown alternately by two materials...

Embodiment 2

[0061] The difference between this embodiment and Embodiment 1 is that in Embodiment 1, the annular microcavity is directly connected to the ridge waveguide, and there is no electrode on the annular microcavity, but in this embodiment, a side edge is added between the annular microcavity and the ridge waveguide. The electrical isolation area is electrically isolated, and a planar electrode is arranged above the annular microcavity.

[0062] Such as image 3 As shown, a side electrical isolation region 65 is added between the annular microcavity and the ridge waveguide, and a planar electrode is arranged above the annular microcavity, and the electrode of the annular microcavity is connected to the electrode of the gain region 61 and the electrode of the saturable absorption region 63. Independent and not connected, in this way, the wavelength of the semiconductor laser can be adjusted in a small range by adjusting the current injected into the ring microcavity, and the ability...

Embodiment 3

[0064] The difference between this embodiment and Embodiment 1 and Embodiment 2 is that in this embodiment, the microcavity structure adopts a disc-shaped microcavity structure, that is, the upper waveguide layer 6 or the lower waveguide layer 4 adopts a ridge waveguide structure and a disc-shaped The combination of microcavity structure.

[0065] Figure 4 A schematic diagram of the disc-shaped microcavity directly connected to the ridge waveguide without electrodes on the disc-shaped microcavity is given.

[0066] Figure 5 A schematic diagram is shown in which a side electrical isolation region 65 is added between the disk-shaped microcavity and the ridge waveguide for electrical isolation, and a planar electrode is arranged above the disk-shaped microcavity.

[0067] Other structures of this embodiment are the same as those of Embodiment 1 and Embodiment 2, and will not be repeated here.

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Abstract

The invention relates to a wavelength-tunable semiconductor laser comprising: an active layer, a waveguide layer and a separation confinement layer; wherein the waveguide layer is located between theactive layer and the separation confinement layer; the waveguide layer comprises a ridge waveguide and a micro cavity, and the micro cavity is located on one side of the ridge waveguide. The wavelength-tunable semiconductor laser provided by the present invention can increase the 3dB bandwidth of the semiconductor laser by using the gain lever effect generated by the saturation absorption region of the electrically modulated ridge waveguide to realize high-speed modulation. The semiconductor laser proposed by the present invention also utilizes a micro cavity structure on the side of the semiconductor laser to achieve selective output of the wavelength of the semiconductor laser.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a semiconductor laser with tunable wavelength. Background technique [0002] High-speed semiconductor lasers are key devices in long-distance, high-capacity optical fiber communication systems, and they also play a very important role in high-speed signal processing systems and high-speed wavelength division multiplexing systems. In recent years, in order to meet people's extensive demand for high-speed lasers, major companies and research institutions have carried out a large number of related researches, and have reported high-speed semiconductor lasers with various structures and designs, such as P-doped strained quantum well lasers, distributed feedback (DFB) lasers, strain-compensated multiple quantum well lasers, distributed reflective (DBR) lasers, etc. [0003] At present, microcavity semiconductor lasers have broad application prospects in optical communica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/06H01S5/10
CPCH01S5/0601H01S5/1042Y02P70/50
Inventor 林中晞林琦徐玉兰陈景源钟杏丽朱振国薛正群苏辉
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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