System and method for optimizing writing operation current of phase change memories

Abstract

The invention provides a system and method for optimizing writing operation current of phase change memories. The method comprises the following steps of: adjusting writing operation current on the basis of a writing operation current change step length to ensure that the writing operation current is sequentially increased from minimum writing operation current to maximum; after the writing operation current is obtained at each time, carrying out a writing operation and electric test on a to-be-operated unit and obtaining resistance data and a V-I characteristic curve corresponding to the writing operation current; before each writing operation, carrying out an erasing operation on the to-be-operated unit on the basis of a same preset erasing parameter; carrying out statistical analysis onthe resistance data corresponding to different writing operation current and screening true writing operation current which enables the to-be-operated unit to successfully undergo writing operation;fitting the V-I characteristic curves corresponding to the true writing operation current to obtain a plurality of subthreshold slopes; and carrying out statistical analysis on the obtained subthreshold slopes to obtain the optimal writing operation current. Through the system and method, the problem that existing methods cannot screen the optimal writing operation current is solved.

Description

technical field [0001] The invention relates to the field of integrated circuit testing, in particular to a system and method for optimizing the writing operation current of a phase-change memory. Background technique [0002] Phase change memory is a new type of non-volatile memory, which has the characteristics of fast read and write speed, compatibility with CMOS technology, and high density. The core of the phase change memory is a phase change material based on chalcogenide compounds. The phase change material exhibits different resistance values ​​in the amorphous state and the crystalline state, and there is a large resistance difference. The resistance value difference of the unit device can be To 2-3 magnitude. The basic working principle of phase change memory is to apply different pulses at both ends of the phase change device unit, so that the phase change material can be converted between the amorphous state and the crystalline state to realize the writing and ...

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a system and method for optimizing the write operation current of a phase change memory, which is used to solve the problem that the existing method has insufficient precision so that the optimal write operation current cannot be screened out, thereby Causes problems such as over-operation and high power consumption of phase change memory

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