A read circuit with redundant structure

Abstract

The invention discloses a read circuit with a redundant structure, comprising a first sense amplifier, a second sense amplifier, a third sense amplifier, a first magnetic tunnel junction MTJ1, a second magnetic tunnel junction MTJ2, a first transistor T1, a second magnetic tunnel junction Two transistors T2 and a voting circuit; the input ends of the three sensitive amplifiers are all connected to the chip selection signal end of the memory, and the left and right branches of the three sensitive amplifiers respectively pass through the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 and connect with the first magnetic tunnel junction MTJ2. The first transistor T1 and the second transistor T2 are grounded, and the output terminals of the three sensitive amplifiers are connected to the input terminals of the voting circuit; the effect is: by using multiple sensitive amplifiers for current reading and sharing the magnetic tunnel junction, even if a certain sensitive amplifier After the amplifier reads errors, the wrong data can be shielded after passing through the voting circuit, so as to reduce the read error rate and make the read data more accurate.

Description

technical field [0001] The invention belongs to the technical field of memory circuits, and in particular relates to a read circuit with a redundant structure. Background technique [0002] At present, in the general register or random access memory read circuit, most of the amplification part has only one sense amplifier. However, because the high-speed sense amplifier is very sensitive to the change of CMOS process and the mismatch of the device, when the device does not match, it will cause read errors, resulting in a certain read error rate of the sense amplifier. In addition, when it is applied to the magnetic random access memory and combined with the magnetic tunnel junction (MTJ), due to the difference in TMR (tunnel magnetoresistance), the read error rate of the sense amplifier will also be different. Contents of the invention [0003] In order to solve the above problems, the present invention provides a read circuit with a redundant structure, which is used to ...

AI Technical Summary

Problems solved by technology

However, because the high-speed sense amplifier is very sensitive to the change of CMOS process and the mismatch of the device, the read error will be caused when the device does not match, resulting in a certain read error rate of the sense amplifier.

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