Method for obtaining large-area high-quality flexible self-supporting single-crystal oxide films based on van der Waals epitaxy

A technology of oxide thin film and single crystal oxide, which is applied in the field of microelectronics, can solve the problems of increasing the time and high cost of thin film preparation and transfer, and achieve the effects of improving thin film preparation efficiency, preventing cracking, and reducing lattice mismatch

Active Publication Date: 2020-08-04
XIDIAN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ion exchange method is to use the chemical replacement reaction between the ion exchanger and the liquid electrolyte to separate, the choice of material is limited by the type of exchanger, and the cost is high; the chemical corrosion method is to use acid or alkali solution to corrode The sacrificial layer in the middle is used for separation. This method needs to grow the sacrificial layer first, which increases the time for film preparation and transfer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for obtaining large-area high-quality flexible self-supporting single-crystal oxide films based on van der Waals epitaxy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1: Preparation of large-area high-quality flexible self-supporting cobalt ferrite film.

[0026] Step 1: Cobalt ferrite thin films are grown on mica substrates.

[0027] 1a) Put the mica substrate and cobalt ferrite target into the reaction chamber of the pulsed laser deposition system, and evacuate the reaction chamber until the vacuum degree reaches 1*10 -6 Below mbar, oxygen is introduced into the reaction chamber to maintain the oxygen pressure of the reaction chamber at 0.01 mbar;

[0028] 1b) Turn on the laser switch and set the energy density of the laser to 2.4J / cm 2 , the frequency is 5Hz, the temperature of the substrate is set to 600 ℃, and the cobalt ferrite target is burned 2000 times by the laser beam, so that the burned cobalt ferrite plasma is deposited on the substrate, and the growth of the cobalt ferrite film is completed. .

[0029] Step 2: Forming a cobalt ferrite film with attached polymethyl methacrylate PMMA.

[0030] 2a) Spin-coat a ...

Embodiment 2

[0037] Example 2: Preparation of large-area high-quality flexible self-supporting strontium titanate thin film.

[0038] Step 1: growing a strontium titanate thin film on a mica substrate.

[0039] 1.1) Put the mica substrate and strontium titanate target into the reaction chamber of the pulsed laser deposition system, and evacuate the reaction chamber until the vacuum degree reaches 1*10 -6 Below mbar, oxygen is introduced into the reaction chamber to maintain the oxygen pressure of the reaction chamber at 0.01 mbar;

[0040] 1.2) Turn on the laser switch and set the energy density of the laser to 3J / cm 2 , the frequency is 5Hz, the temperature of the substrate is set to 800 ℃, and the strontium titanate target is sintered 1000 times by the laser beam, so that the strontium titanate plasma obtained from the sintering is deposited on the substrate, and the growth of the strontium titanate film is completed. .

[0041] Step 2: forming a strontium titanate film attached with ...

Embodiment 3

[0049] Example 3: Preparation of large-area high-quality flexible self-supporting strontium niobate titanate thin film.

[0050] Step A: Growth of a thin film of strontium titanate doped niobate on a mica substrate.

[0051] A1) Put the mica substrate and the strontium niobate titanate target into the reaction chamber of the pulsed laser deposition system, and evacuated the reaction chamber until the vacuum degree reaches 1*10 -6 Below mbar, oxygen is introduced into the reaction chamber to maintain the oxygen pressure of the reaction chamber at 0.01 mbar;

[0052] A2) Turn on the laser switch and set the energy density of the laser to 2.8J / cm 2 , the frequency is 5Hz, the temperature of the substrate is set to 750 ℃, and the strontium niobate titanate target is sintered 3000 times by the laser beam, so that the sintered strontium niobate titanate plasma is deposited on the substrate, and the niobium-doped strontium titanate is completed. Growth of strontium titanate thin fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for acquiring a large-area high-quality flexible self-supporting single crystalline oxide film based on Van der Waals epitaxy, and mainly solves a problem in the priorart that a process for preparing the oxide film is complicated. The method comprises the following steps: 1, growing the oxide film on a mica substrate through a pulsed laser deposition technology; 2, spin-coating the surface of the oxide film by polymethyl methacrylate, and soaking in weakly acidic solution, while corners of the film are upwarping, taking out the film and placing in clear water,enabling the film to break away from the mica substrate by using a tension force of the water, and transferring to a follow-up needed substrate, to obtain the large-area high-quality flexible self-supporting single crystalline oxide film. The method is capable of, through using the mica substrate and the weakly acidic solution, acquiring the large-area high-quality flexible self-supporting singlecrystalline oxide film based on the Van der Waals epitaxy, greatly shortening the film preparation time, and preparing the multi-functional oxide film for a flexible electronic device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a method for obtaining a large-area high-quality flexible self-supporting single crystal oxide film, which can be used for the preparation of various functional oxide films. Background technique [0002] Flexible electronic devices are an emerging electronic technology that manufactures electronic devices on flexible and extensible organic or thin metal substrates. It has broad application prospects, such as flexible displays, flexible wearable devices, epidermal electronics, and flexible solar cells. Flexible electronic devices are mainly composed of metal or semiconductor films and flexible substrates. The two most critical points in the preparation of flexible electronic devices are how to prepare flexible semiconductor films with excellent performance, good ductility and stable structure, and how to completely transfer the films to subsequent flexible sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/08C30B29/16C30B29/64
CPCC30B23/025C30B23/08C30B29/16C30B29/64
Inventor 陆小力王涛吴飞虎王贺黄玉瑶张进成郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap