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Flexible CdTe thin film solar cell, and preparation method and application thereof

A thin-film solar cell, flexible technology, applied in circuits, electrical components, climate sustainability, etc., can solve the problems that device performance cannot be effectively improved, flexible solar cells are difficult to overcome technical bottlenecks, etc., to achieve the effect of battery preparation technology

Inactive Publication Date: 2018-09-04
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although some explorations have been made on the process characteristics of CdTe solar cells with a lower substrate structure, due to the limitations of the cell structure, there are technical bottlenecks that are difficult to overcome in the preparation of flexible solar cells (back contact interface engineering, CdCl 2 "Activate" heat treatment, etc.), device performance has not been effectively improved

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  • Flexible CdTe thin film solar cell, and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] (1) Use an aluminum sheet with a thickness of 2 mm as a temporary substrate, and use an aluminum cleaning solution to clean the aluminum surface. The ultrasonic cleaning time is 5 minutes, and then rinse it with deionized water, and use N2 blow dry.

[0040] (2) Deposit transparent conductive oxide SnO on the surface of aluminum substrate by magnetron sputtering 2 :F(FTO), the film thickness is about 500nm. Sputtering SnO in Ar Atmosphere by Magnetron Sputtering 2 :F target (SnO with a molar ratio of 10:1 2 and SnF 2 powder mixed hot pressing target), the substrate temperature is 200°C, the sputtering power is 90W, and the sputtering time is 30min.

[0041] (3) CdS was deposited on the surface of FTO by the chemical water bath (CBD) method, the reaction precursors were ammonium acetate (0.7708g), cadmium acetate (0.1333g) and thiourea (0.1903g), the solution volume was 500mL, and the reaction deposition temperature was 80°C, the deposition time is 30 minutes, and th...

Embodiment 2

[0049] (1) Use an aluminum sheet with a thickness of 1 mm as a temporary substrate, and use an aluminum cleaning solution to clean the aluminum surface. The ultrasonic cleaning time is 5 minutes, and then rinse it with deionized water, and use N 2 blow dry.

[0050] (2) Deposit transparent conductive oxide SnO on the surface of aluminum substrate by magnetron sputtering 2 :F(FTO), the film thickness is about 300nm. Sputtering SnO in Ar Atmosphere by Magnetron Sputtering 2 :F target (SnO with a molar ratio of 10:1 2 and SnF 2 powder mixed hot pressing target), the substrate temperature is 200°C, the sputtering power is 90W, and the sputtering time is 20min.

[0051] (3) CdS was deposited on the surface of FTO by the chemical water bath (CBD) method, the reaction precursors were ammonium acetate (0.7708g), cadmium acetate (0.1333g) and thiourea (0.1903g), the solution volume was 500mL, and the reaction deposition temperature was 80°C, the deposition time is 30 minutes, and ...

Embodiment 3

[0060] (1) Use an aluminum sheet with a thickness of 0.5 mm as a temporary substrate, and use an aluminum cleaning solution to clean the aluminum surface. The ultrasonic cleaning time is 5 minutes, then rinse it with deionized water, and use N 2 blow dry.

[0061] (2) Deposit transparent conductive oxide SnO on the surface of aluminum substrate by magnetron sputtering 2 :F(FTO), the film thickness is about 300nm. Sputtering SnO in Ar Atmosphere by Magnetron Sputtering 2 :F target (SnO with a molar ratio of 10:1 2 and SnF 2 powder mixed hot pressing target), the substrate temperature is 200°C, the sputtering power is 90W, and the sputtering time is 20min.

[0062] (3) CdS was deposited on the surface of FTO by the chemical water bath (CBD) method. The reaction precursors were ammonium acetate, cadmium acetate and thiourea ammonium acetate (0.7708g), cadmium acetate (0.1333g) and thiourea (0.1903g). The volume is 500mL, the reaction deposition temperature is 80°C, the depos...

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Abstract

The invention belongs to the photovoltaic new energy material and device field, and discloses a flexible CdTe thin film solar cell, and a preparation method and application thereof. The flexible CdTethin film solar cell, and the preparation method and application thereof are characterized in that a mature upper substrate structure CdTe cell preparation technology can be employed on a temporary metal substrate to obtain temporary metal substrate thin layer after completion of cell preparation, thus avoiding technical limitation of back contact preparation, Cu doping, CdS / CdTe heat treatment and the like, caused by the deposition sequence of functional layers, and being conductive to optimization of the cell preparation technology.

Description

technical field [0001] The invention belongs to the field of photovoltaic new energy materials and devices, in particular to a flexible CdTe thin film solar cell and its preparation method and application. Background technique [0002] Cadmium telluride (CdTe) is a direct bandgap semiconductor with a bandgap width of 1.45eV, and its absorption coefficient for visible light is 100 times higher than that of silicon, so it is an ideal photovoltaic material. CdTe thin film solar cell is a thin film solar cell device based on n-CdS / p-CdTe heterojunction structure. At present, the highest laboratory conversion efficiency of CdTe solar cells is 22.1%, the module conversion efficiency is 18.6%, and the theoretical conversion efficiency can reach 33%. As one of the most competitive solar cells, CdTe thin-film solar cell has both high conversion efficiency and low cost. After nearly 20 years of rapid development, it has become the second largest product system in the current photovol...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1832Y02P70/50
Inventor 麦耀华沈凯张冲
Owner JINAN UNIVERSITY
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