Dielectric geometric phase metasurface material with low depth-to-width ratio and structural optimization method thereof

Abstract

The invention discloses a dielectric geometric phase metasurface structure material with a low depth-to-width ratio and a structural optimization method thereof. The dielectric geometric phase metasurface structure material comprises a substrate, a reflecting layer on the substrate, a multi-beam interference layer on the reflecting layer and a dielectric nano brick array formed by periodically arranging a plurality of dielectric nano bricks with consistent sizes on the multi-beam interference layer, wherein the dielectric nano brick array is used for receiving perpendicularly incident circularly polarized light and adjusting the phase of the emergent light through adjusting the direction of each dielectric nano brick. The depth-to-width ratio of the dielectric geometric phase metasurface structure material is reduced to half of the depth-to-width ratio of the traditional transmission-type metasurface material, and the depth-to-width ratio is about 1.7, so that the requirements for theprocessing technology are reduced, and the finished product rate and mass production of the device are guaranteed.

Description

technical field [0001] The invention relates to the field of micro-nano optics, in particular to a dielectric geometric phase metasurface material with a low aspect ratio and a structure optimization method thereof. Background technique [0002] In recent years, a new generation of artificial electromagnetic structural materials represented by metasurfaces has become a hot spot in many fields. As the unique optical properties of metasurfaces and many novel physical phenomena are continuously discovered, the industry is eagerly looking forward to its ability to lead a new round of optoelectronic industry revolution. However, although scientists claim that the metasurface process is fully compatible with existing semiconductor processes, in fact its manufacturing is constantly challenging the limits of current semiconductor process processing, and there is even a lack of effective development ideas in terms of mass production. For example, the titanium dioxide metasurface len...

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Problems solved by technology

However, although scientists claim that the metasurface process is fully compatible with existing semiconductor processes, in fact its manufacturing is constantly challenging the limits of current semiconductor process processing, and there is even a lack of effective development ideas in terms of mass production.

For example, the titanium dioxide metasurface lens, which was rated as one of the top ten technological breakthroughs in the world in 2016 by Science magazine, has a micro-nano structure with an aspect ratio as high as 15. [1] , the traditional semiconductor process cannot guarantee the required minimum process error requirements

Even if the atomic layer deposition (ALD) process mentioned in the article is adopted, the yield and mass production of the device are still not guaranteed, not to mention the performance of high aspect ratio devices in terms of imaging vignetting and off-axis point aberration correction also unsatisfactory

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