Metal tungsten surface nanocrystallization device and method thereof

A technology of metal tungsten and nanotechnology, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of high processing cost, complicated operation process, complex structure of metal tungsten surface nanotechnology devices, etc. , to achieve the effect of simple preparation process, easy operation process and simple structure

Active Publication Date: 2018-08-28
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims at the problems in the prior art that the metal tungsten surface nanometerization device has complex structure, high processing cost, coexistence of high temperature, high pressure, vacuum and water cycle working conditions in the preparation process, complicated and dangerous operation process, and proposes a A metal tungsten surface nanometerization device with simple structure, low cost and easy operation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal tungsten surface nanocrystallization device and method thereof
  • Metal tungsten surface nanocrystallization device and method thereof
  • Metal tungsten surface nanocrystallization device and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The specific implementation steps of the nanometerization of the surface of the metal tungsten sheet 8 are as follows:

[0040] (1) Pre-treatment of the nano-sized metal tungsten sheet 8: the metal tungsten sheet 8 is sequentially polished with 500-mesh, 800-mesh, and 1200-mesh sandpaper to remove the surface oxide layer and mechanical processing marks, and then polished to the mirror surface with 1 μm abrasive paste, and then Using ethanol, acetone and compressed nitrogen in sequence to clean the surface of the metal tungsten sheet 8;

[0041] (2) Vacuum environment: place the metal tungsten sheet 8 on the tungsten cylinder 6, and evacuate the vacuum chamber 1 to a vacuum degree of 3×10 - 4 Pa;

[0042] (3) Argon gas cleaning: In the vacuum chamber 1, argon gas is introduced to 80Pa, and a bias voltage is applied to ionize the argon gas to form an energy of 1000eV on the surface of the metal tungsten sheet 8, and a beam intensity of 150 μA / cm 2 The argon ion beam is...

Embodiment 2

[0046] The specific implementation steps of the nanometerization of the surface of the metal tungsten sheet 8 are as follows:

[0047] (1) Pre-treatment of the nano-sized metal tungsten sheet 8: the metal tungsten sheet 8 is sequentially polished with 500-mesh, 800-mesh, and 1200-mesh sandpaper to remove the surface oxide layer and mechanical processing traces, and then polished to a mirror surface with 3 μm abrasive paste, and then Using ethanol, acetone and compressed nitrogen in sequence to clean the surface of the metal tungsten sheet 8;

[0048] (2) Vacuum environment: place the metal tungsten sheet 8 on the tungsten cylinder 6, and evacuate the vacuum chamber 1 to a vacuum degree of 3×10 - 4 Pa;

[0049] (3) Argon gas cleaning: In the vacuum chamber 1, argon gas is introduced to 30Pa, and biased ionized argon gas is applied to form an energy of 500eV on the surface of the metal tungsten sheet 8, and a beam intensity of 50 μA / cm 2 The argon ion beam is used to perform ...

Embodiment 3

[0053] Preferably, the specific implementation steps of the nanometerization of the surface of the metal tungsten sheet 8 are as follows:

[0054] (1) Pre-treatment of the nano-sized metal tungsten sheet 8: the metal tungsten sheet 8 is sequentially polished with 500-mesh, 800-mesh, and 1200-mesh sandpaper to remove the surface oxide layer and mechanical processing marks, and then polished to a mirror surface with 2 μm abrasive paste, and then Using ethanol, acetone and compressed nitrogen in sequence to clean the surface of the metal tungsten sheet 8;

[0055] (2) Vacuum environment: place the metal tungsten sheet 8 on the tungsten cylinder 6, and evacuate the vacuum chamber 1 to a vacuum degree of 3×10 - 4 Pa;

[0056] (3) Argon gas cleaning: In the vacuum chamber 1, argon gas is introduced to 70Pa, and biased ionized argon gas is applied to form an energy of 800eV on the surface of the metal tungsten sheet 8, and a beam intensity of 100 μA / cm 2 The argon ion beam is used...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a metal tungsten surface nanocrystallization device and a method thereof. The method comprises the following steps: taking a tungsten cylinder provided with small holes as a hollow cathode device to form a hollow cathode effect, ionizing helium gas to obtain low-voltage and high-current helium plasma, enabling the helium ions to carry out bombardment action on the surface of a tungsten sample, rapidly increasing the temperature of the sample to be higher than 1600K in 5 minutes through the hollow cathode effect, injecting a certain quantity of helium ions, then obtaining a nanostructure in tight connection with a matrix on the tungsten surface. According to the metal tungsten surface nanocrystallization device and the method thereof, the device is simple and convenient, is low in cost, simple in process and high in production efficiency, and is capable of forming uniform and consistent nanostructure growth layers in tight connection with the matrix on the surface of the metal tungsten; a new method for solving nanocrystallization of the tungsten surface is provided; the products can be further treated to obtain photocatalytic materials for preparing decomposition water.

Description

technical field [0001] The invention belongs to the technical field of metal surface nanometerization treatment, and in particular relates to a device and method for metal tungsten surface nanometerization. Background technique [0002] Due to their surface properties, nanostructured material surfaces have important applications in many fields. In particular, the surface of some materials with loose and porous nanostructures is very beneficial for photocatalytic processes, such as photoelectrochemical water splitting. In addition, with the common photocatalytic material TiO 2 In contrast (it can only use the ultraviolet band of light, and the ultraviolet band only accounts for 3-5% of sunlight), oxides or nitrides of some materials, such as tungsten, tantalum, etc., can make full use of the visible light band for catalytic reactions. The surface nanosizing of these materials can effectively improve their catalytic efficiency, because on the one hand, the three-dimensional ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/22C23C14/02C23C14/16B82Y30/00
CPCB82Y30/00C23C14/022C23C14/165C23C14/221
Inventor 胡殷龙重朱康伟陈林刘天伟邢颖高博徐海燕王文渊孟宪东
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap