Organic light-emitting display panel, display device and preparation method thereof
An organic light-emitting panel and light-emitting display technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of material and device life attenuation, so as to improve life, improve utilization rate, and increase number density Effect
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Embodiment 1
[0040] Using the indium tin oxide (ITO) layer on the substrate as the anode, sequentially form the hole injection layer (5-30nm), the hole transport layer (1000-1300nm), the first electron blocking layer (10-80nm), and the light-emitting layer (20~40nm), electron transport layer (20~35nm), electron injection layer (1~3nm), Mg-Ag alloy cathode.
[0041] The doping material is m-MTADATA.
Embodiment 2
[0043]Using the indium tin oxide ITO layer on the substrate as the anode, sequentially form the hole injection layer (5-30nm), the hole transport layer (1000-1300nm), the second electron blocking layer (5-70nm), the first electron blocking layer layer (5-10nm), light-emitting layer (20-40nm), electron transport layer (20-35nm), EIL (1-3nm), Mg-Ag alloy cathode.
[0044] Doping material is Ir(ppy) 3 .
[0045] The present invention improves the lifetime of the inventive device by doping or partially doping (adjacent to the EBL / EML interface) hole-type dopant material in the EBL. The reason why the lifetime can be improved is that the electron blocking layer itself is generally an electron-rich material, and generally contains an aniline structure. The recombination interface is between EBL / EML, which means that a large number of electrons will be transmitted to this interface, if the transported electrons cannot be recombined by holes in time. Then too many electrons will ha...
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Abstract
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Application Information
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