Storage structure and manufacturing method thereof

Abstract

The invention discloses a storage structure and a manufacturing method thereof. The manufacturing method comprises that a semiconductor structure in which a groove is formed is provided; a multi-layerfilm layer is formed, and the multi-layer film layer comprises a first dielectric layer formed in the top of the semiconductor structure and the sidewall and the bottom of the groove, an electron storage layer covering the first dielectric layer and a second dielectric layer covering the electron storage layer; part of the multi-layer film layer is etched, the multi-layer film layer in the sidewall of the groove is reserved, and at least part of the electron storage layer in the bottom of the groove is exposed; and the electron storage layer in the bottom of the groove is removed. The electron storage layer in the bottom of the groove is removed, so that the electron storage layer in the bottom of the groove is prevented from electron storage, and performance of the storage structure is improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a storage structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, it has gradually transitioned from a simple planar structure to a more complex three-dimensional structure, especially the current technology research and development of three-dimensional storage structures has become a mainstream in international research and development. [0003] At present, in the process of forming the three-dimensional storage structure, when forming the corresponding contact hole structure, please refer to figure 1 , is a schematic cross-sectional view of a contact hole structure in the prior art. The method for forming the structure includes: providing a substrate 10; depositing an oxide layer 11, a first silicon dioxide layer 121 and The overlapping layer 12 and the hard mask l...

AI Technical Summary

Problems solved by technology

In the above structure, as shown in the figure, it can be clearly seen that an L-shaped silicon nitride layer 16 (as shown by two dotted circles in the figure) appears at the bottom of the trench. The characteristics of capturing electrons, so the memory structure formed by the existing follow-up process can easily store electrons at the position indicated by the dotted circle in the figure, which affects the electrical properties of the entire device

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