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Preparation method for mesoporous silica nano hemisphere material

A mesoporous silica and hemispherical technology, applied in the direction of silica, silicon oxide, etc., can solve the problems of small adjustable range of pore diameter, limited growth substrate, small pore diameter, etc.

Active Publication Date: 2018-08-24
元颉新材料科技(浙江)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention proposes a method for preparing a mesoporous silica nano-hemispherical material, which solves the problems of the mesoporous hemispherical material in the prior art such as small pore size, small adjustable range of pore size, and limited growth substrate.

Method used

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  • Preparation method for mesoporous silica nano hemisphere material
  • Preparation method for mesoporous silica nano hemisphere material
  • Preparation method for mesoporous silica nano hemisphere material

Examples

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Embodiment 1

[0035] A mesoporous silica nano-hemisphere material and a preparation method thereof, comprising:

[0036] (1) Water phase system:

[0037] Dissolve 2.0g of cetyltrimethylammonium chloride and 0.075mL of triethanolamine in 20mL of deionized water successively, stir evenly to form a colorless and transparent solution; put the colorless and transparent solution into the reactor, and then add 30mg of graphene oxide, then ultrasonically dispersed, and continued to stir for 0.5h to obtain a black solution;

[0038] Oil phase system: Dissolve ethyl orthosilicate in cyclohexane to obtain 7mL organic solution; the concentration of ethyl orthosilicate is 10wt%;

[0039] Add the organic solution dropwise on top of the black solution to form an oil-water two-phase layered system;

[0040] (2) reacting the two-phase layered system in the step (1) in an oil bath at a temperature of 60° C. for 5 h; obtaining a mesoporous hemisphere grown on a graphene substrate;

[0041] (3) Place the ab...

Embodiment 2

[0044] A mesoporous silica nano-hemisphere material and a preparation method thereof, comprising:

[0045] (1) Water phase system:

[0046] Dissolve 0.1g of cetyltrimethylammonium chloride and 0.075mL of triethanolamine in 20mL of deionized water successively, stir evenly to form a colorless and transparent solution; put the colorless and transparent solution into the reactor, and then add 5mg of graphene oxide, then ultrasonically dispersed, and continued to stir for 0.5h to obtain a black solution;

[0047] Oil phase system: Dissolve fumed silica in n-hexane to obtain 8mL organic solution; the concentration of fumed silica is 2.5wt%;

[0048] Add the organic solution dropwise on top of the black solution to form an oil-water two-phase layered system;

[0049] (2) reacting the two-phase layered system in the step (1) in an oil bath at a temperature of 60°C for 5h; obtaining a mesoporous hemisphere grown on a graphene substrate;

[0050] (3) Place the above-mentioned mesopo...

Embodiment 3

[0053] A mesoporous silica nano-hemisphere material and a preparation method thereof, comprising:

[0054] (1) Water phase system:

[0055]Dissolve 4.0g of octadecyltrimethylammonium chloride and 0.15mL of dodecylamine successively into 20mL of deionized water, stir evenly to form a colorless and transparent solution; put the colorless and transparent solution into the reactor, and then Add 200 mg of reduced graphene oxide and graphene, then ultrasonically disperse, and continue stirring for 1.0 h to obtain a black solution;

[0056] Oil phase system: Dissolve ethyl orthosilicate in n-hexane to obtain 8mL organic solution; the concentration of the solvent is 40wt%;

[0057] Add the organic solution dropwise to the top of the black solution to form an oil-water two-phase layered system, and continue to react under this condition for 10 h;

[0058] (2) React the two-phase layered system in step (1) in an oil bath at a temperature of 80°C; obtain mesoporous hemispheres grown on...

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Abstract

The invention discloses a preparation method for a mesoporous silica nano hemisphere material. The preparation method comprises the following steps: (1) dissolving a surfactant and a catalyst into water, stirring until a clear solution; adding graphene substrate into the clear solution to obtain a black solution; dissolving a silicon source into the organic solvent to obtain an organic solution; adding the organic solution into the black solution to obtain a two-phase layering system; (2) reacting the two-phase layering system at temperature being 40-80 DEG C to obtain a mesoporous hemispheregrown on the graphene substrate; and (3) under air atmosphere, removing the surfactant and the graphene substrate of the mesoporous hemisphere to obtain the mesoporous hemisphere nano material. The preparation method adopts an oil-water two-phase reaction system; as a result of the hole-expanding effect of the organic phase, the mesoporous hole diameter of the obtained hemisphere is increased much; and the hole diameter of the hemisphere is controlled by regulating parameters of the organic phase, so that free control on the hole diameter being 2.5-25 nm is realized.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing a mesoporous silica nanometer hemisphere material. Background technique [0002] Inorganic mesoporous hemispherical materials are important asymmetric mesoporous materials with high porosity, large specific surface area, stable chemical properties, and low cost. They are widely used in the fields of adsorption, catalysis, filtration, and energy storage. In recent years, the preparation of mesoporous hemispherical materials is very common, but due to the limitation of the preparation method, there are many disadvantages: 1. The pore size is small (~3nm), which can only be selectively applied to the adsorption and separation of small nano-materials, and cannot be applied for larger nanoparticles and biomacromolecules. 2. Limited by the template agent, its pore size can only be adjusted within a small range (2.0-4.0nm), and it is impossible t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/18
CPCC01B33/18C01P2004/30C01P2004/62C01P2004/64C01P2006/12C01P2006/14C01P2006/17
Inventor 赵东元朱洪伟刘玉普
Owner 元颉新材料科技(浙江)有限公司
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