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Mercurous chloride single crystal growing device and method

A technology for single and crystal growth of mercurous halide, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., and can solve the problem of complex devices, difficulty in preparing calomel iodide crystals, and difficult and accurate contact between seed crystals and iodine-rich melts Control and other issues to achieve the effect of improving symmetry, reducing heat convection and heat conduction effects, and improving thermal insulation performance

Active Publication Date: 2018-08-17
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent document CN105063752A discloses a method and device for growing a mercurous iodide single crystal, which uses a melt method to grow the crystal, including placing a mercurous iodide seed crystal, liquid mercury, and a calomel iodide precast ingot The melting and crystallization of mercurous iodide further include heating and melting the mercurous iodide polycrystalline raw material and then naturally cooling to prepare the mercurous iodide precast ingot. The device is relatively complicated, and elemental mercury with greater toxicity is used as the Raw materials, and need to pre-prepared calomel iodide pre-cast ingots, the contact between the seed crystal and the iodine-rich melt is not easy to accurately control, it is difficult to prepare high-quality calomel iodide crystals, and whether large-scale calomel chloride can be successfully grown and mercurous bromide crystals are still unknown

Method used

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  • Mercurous chloride single crystal growing device and method
  • Mercurous chloride single crystal growing device and method
  • Mercurous chloride single crystal growing device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 As shown, a mercury halide single crystal growth device includes a furnace body, a frame connected to the furnace body for supporting the furnace body, and a support mechanism 8;

[0047] The furnace body includes a furnace tube 2 and a thermal insulation cover 1 coated on the outer surface of the furnace tube 2, and a heating furnace wire 3 is arranged between the furnace tube 2 and the thermal insulation cover 1;

[0048] The support mechanism 8 is connected to the crystal growth rod 5 through the rotating device 7 to control the rotation of the crystal growth rod 5. The crystal growth rod 5 is interspersed in the furnace tube 2, and the crystal growth rod 5 is located in the furnace The end of the tube 2 is provided with a growing quartz ampoule 4; the support mechanism 8 is also connected with the lifting bracket 10 through the lifting rod 9 to control the lifting of the long crystal rod 5;

[0049] The outer surface of the furnace tube 2 is provid...

Embodiment 2

[0056] As described in Embodiment 1, the difference is: the described mercurous halide single crystal growth device also includes a control device 11, the control device 11 is a computer and is equipped with configuration software, and the rotating device 7 and the lifting rod 9 are respectively connected Independent servo motors, the servo motors are connected to the control device, and the lifting and rotation of the growing quartz ampoule 4 are controlled by two independent servo motors to realize automatic control. That is: the control device 11 is a computer, which is used to control the speed of the elevating rod 9 and the rotating device 7 . The lifting and rotation of the ampoule are controlled by two independent servo motors, and the servo motors are connected to the configuration software to realize automatic control. The lifting rod 9 is composed of a precision linear guide rail and a precision ball screw and connected to a servo motor. That is: the lifting and mov...

Embodiment 3

[0058] As shown in Embodiment 2, the difference is: the part between the long crystal rod 5 and the furnace tube 2 and the insulation cover 1 is equipped with a thermocouple 6, and is connected with the control device 11 for measuring temperature, so as to ensure that the long crystal rod 5 During normal rotation, the temperature at the bottom of the ampoule and the heating temperature of the furnace body can be monitored in real time. The rotation device 7 controls the rotation of the long crystal rod 5 to improve the symmetry of crystal growth. A temperature-measuring thermocouple 6 is installed in the long crystal rod 5 to ensure that the temperature at the bottom of the ampoule can be monitored in real time when the long crystal rod 5 rotates normally. During the crystal growth process, the up and down of the long crystal rod 5 controls the up and down of the ampoule, which can precisely control the temperature of the crystal growth.

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Abstract

The invention relates to a mercurous chloride single crystal growing device and method. The device comprises a furnace body, and a rack and a supporting mechanism which are connected with the furnacebody and used for supporting the furnace body; the furnace body comprises a furnace tube and a heat preservation sleeve coating the outer surface of the furnace tube, and a heating furnace wire is arranged between the furnace tube and the heat preservation sleeve; the supporting mechanism is connected with a long crystalline style through a rotating device for controlling the rotation of the longcrystalline style, the long crystalline style is inserted in the furnace tube, the end portion, located in the furnace tube, of the long crystalline style is provided with a growing quartz ampoule; the supporting mechanism is also used for controlling the lifting of the long crystalline style through a lifting rod and a lifting bracket. The mercurous chloride single crystal growing device and method have the advantages that not only can the temperature of the crystal growing be accurately controlled, but also the situations of the crystal growing can be monitored at any time, and large-size and high-quality crystal can be easily obtained through physical vapor transport.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method and a growth device for growing a mercury halide single crystal. Background technique [0002] Acousto-optic devices are a type of optical devices that use the principle of acousto-optic interaction in the medium to control the beam amplitude, direction and frequency through ultrasonic waves. It includes acousto-optic modulators, acousto-optic tunable filters, and acousto-optic deflectors. Compared with other optical modulation devices, acousto-optic devices have the advantages of low operating voltage, fast response, large information capacity, real-time signal processing, high resolution, small size, and easy integration. The working material of the acousto-optic device is the acousto-optic crystal. The acousto-optic crystal with excellent performance generally requires the characteristics of wide light transmission range, large refractive index and birefringence, low sou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/00
CPCC30B11/003C30B11/006C30B29/12
Inventor 张国栋刘琳张鹏陶绪堂
Owner SHANDONG UNIV
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