Preparation method of quantum dot/zinc oxide core shell structure and semiconductor device of quantum dot/zinc oxide core shell structure

A core-shell structure and quantum dot technology, applied in the field of preparation of quantum dot/zinc oxide core-shell structure, can solve the problems of low light/electroluminescence efficiency, poor stability of quantum dots, low charge injection efficiency, etc., and achieve excellent devices. performance, low driving voltage, effect of increasing carrier injection

Inactive Publication Date: 2018-08-07
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA +1
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Problems solved by technology

However, due to short life, poor material stability and other reasons, the use is limited
[0003] And the preparation method of a quantum dot / zinc oxide core-shell structure proposed by the present invention and its semiconductor device are to grow the semiconductor shell layer on the surface of the quantum dot nanocrystal nucleus, which improves the optical properties of the quantum dot nanocrystal nucleus structure, Reduce the fluorescent flicker at the single particle level, overcome the shortcomings of the existing technology, and invent a quantum dot (including core-shell quantum dots and alloy quantum dots) / zinc oxide core-shell structure and its semiconductor device, which solves the problem in QLED technology. Poor stability of quantum dots, low charge injection efficiency, low photo / electroluminescence efficiency and other problems

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  • Preparation method of quantum dot/zinc oxide core shell structure and semiconductor device of quantum dot/zinc oxide core shell structure
  • Preparation method of quantum dot/zinc oxide core shell structure and semiconductor device of quantum dot/zinc oxide core shell structure
  • Preparation method of quantum dot/zinc oxide core shell structure and semiconductor device of quantum dot/zinc oxide core shell structure

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preparation example Construction

[0060] Such as figure 1 As shown, it is a schematic diagram of the overall structure of the first embodiment of the present invention. This embodiment provides a method for preparing a quantum dot / zinc oxide core-shell structure. In this embodiment, zinc oxide is formed on the surface of the quantum dot by chemical epitaxy. Quantum dot / zinc oxide core-shell structure, the preparation method of the quantum dot / zinc oxide core-shell structure comprises the following steps:

[0061] S1: Dissolve the zinc precursor in oleic acid and oleylamine at a temperature of 120°C to obtain a zinc oleate precursor mixture;

[0062] The mass ratio of the zinc precursor to oleic acid and oleylamine is 1:1.3-1.5;

[0063] The mass ratio of oleic acid to oleylamine is 2:3;

[0064] Stir at a low speed after mixing, and the stirring speed is 60-80r / min, under the premise of ensuring that the zinc precursor is not damaged, realize the uniform dispersion of the zinc precursor in the oleic acid and...

no. 2 example

[0080] The present invention also provides a second embodiment, which is a method for preparing a quantum dot / zinc oxide core-shell structure. The content of this embodiment is partly the same as that of the above embodiment, except that in the step In S2, while providing ultraviolet light as a reaction medium, nano-scale titanium dioxide is added as a medium, and the internal luminous efficiency is adjusted. The luminous efficiency can be understood when the quantum dot / zinc oxide core-shell structure prepared by the present invention As a light-emitting material of a photoluminescent device, the enhancement of the luminous efficiency achieved;

[0081] Specifically: add NaHCO in the above step S2 3 , after the reaction time is 1h, increase nano-scale titanium dioxide, the increase of the nano-scale titanium dioxide is 0.1-0.3% of the mass of the entire reaction solution, reduce the reaction temperature to 70-80°C, and continue to maintain the irradiation environment provided...

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Abstract

The invention relates to the quantum dot synthesis field and particularly relates to a preparation method of the quantum dot/zinc oxide core shell structure and a semiconductor device of the quantum dot/zinc oxide core shell structure. The method comprises steps that S1, the zinc precursor is dissolved in oleic acid and oleylamine to obtain the zinc oleate precursor mixture; S2, quantum dots are added to the zinc oleate precursor mixture of the S1 step, NaHCO3 is further added, and reaction under the 180-270 DEG C for 1 hour is further carried out; and S3, repeated dissolution in toluene and absolute ethanol, deposition and centrifugation are carried out, and the quantum dot/zinc oxide core shell structure is acquired. The method is advantaged in that through the quantum dot/zinc oxide core shell structure, quantum efficiency of QLED devices and photobleaching resistance can be enhanced, fluorescence emission flickering at the single particle level is reduced, for quantum dot electroluminescent devices, 1), high-efficiency charge injection, 2), high light emitting brightness, 3), a low driving voltage and 4) high device efficiency can be realized.

Description

technical field [0001] The invention relates to the field of quantum dot synthesis, in particular to a preparation method of a quantum dot / zinc oxide core-shell structure and a semiconductor device thereof. Background technique [0002] With the continuous improvement and development of quantum dot synthesis technology, red, green, and blue quantum dots with high luminous efficiency have been widely prepared. Quantum dot light-emitting diodes (QLEDs) based on quantum dot materials have shown great promise in terms of display quality, device performance, and manufacturing cost by virtue of the characteristics and optimization of quantum dot nanomaterials. potential. However, due to short life, poor material stability and other reasons, the use is limited. [0003] And the preparation method of a quantum dot / zinc oxide core-shell structure proposed by the present invention and its semiconductor device are to grow the semiconductor shell layer on the surface of the quantum do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/115H10K2102/3026H10K71/00
Inventor 孙小卫刘政邱成峰王恺刘召军
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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