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Metal anchor filling technology and thermal detection device

A metal filling and anchor point technology, which is applied in metal material coating technology, semiconductor/solid-state device components, and technology for producing decorative surface effects, etc., can solve the problem of poor coverage of metal Al steps, poor coverage of Al steps, Problems such as poor filling ability of Al can achieve the effect of reducing contact resistance, reducing difficulty, and reducing noise

Active Publication Date: 2018-07-20
IRAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When the pixel size is lower than 17μm, the traditional aluminum (Al) filling will lead to poor coverage of the metal Al step at the bottom of the anchor point and other technical problems: because of the poor Al step coverage, as the pixel size shrinks and the aspect ratio increases, The filling ability of Al becomes poor

Method used

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  • Metal anchor filling technology and thermal detection device
  • Metal anchor filling technology and thermal detection device
  • Metal anchor filling technology and thermal detection device

Examples

Experimental program
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Effect test

Embodiment 1

[0051] This embodiment proposes a metal anchor point filling technology and its improvement. In the process of manufacturing the uncooled infrared detector, it is necessary to manufacture the anchor point of the metal structure, which includes the following steps:

[0052] An anchor point is etched on an application specific integrated circuit (ASIC, Application Specific Integrated Circuit).

[0053] Electrode metal filled or sputtered by titanium aluminum (Ti or Ti / Al, Ti / TiN / AL) process.

[0054] In this process, the further improvement of traditional process methods requires metal W-CVD (tungsten-CVD) and W-CMP processes, and the introduction of expensive W-CVD machines and W-CMP, as well as the inevitable PI etching process. Since the anchor point has a certain area, with the reduction of the pixel size of the detector, if the existing titanium-aluminum process is used to fill, the side metal coverage will be relatively poor, the top metal will be thicker, the filling pro...

Embodiment 2

[0062] Embodiment two (describing the metal anchor point filling process):

[0063] In this embodiment, the improved process in Embodiment 1 will be further described in conjunction with the accompanying drawings:

[0064] In step one, an application specific integrated circuit (ASIC) with a planarized surface is prepared.

[0065] In a specific process, step 1 includes the following sub-steps:

[0066] Such as figure 1 As shown, firstly, a TEOS layer, a Ti / TiN layer and a metal aluminum layer are sequentially deposited on the ASIC 1 .

[0067] Then, the reflective layer 2 and the circuit lead-out electrode 3 are obtained by using a standard photolithographic etching process.

[0068] Finally, a silicon dioxide or silicon nitride layer is deposited on the ASIC 1, the reflective layer 2 and the circuit lead-out electrode 3, and a planarization process is performed using a CMP process to form an ASIC with a planarized surface. ).

[0069] Preferably, the deposition thicknes...

Embodiment 3

[0082] Embodiment three (description product):

[0083] This embodiment will describe the product structure obtained by using the metal anchor point filling process in the previous embodiments, the structure includes:

[0084] An ASIC 1 at the bottom, a reflective layer 2 and a circuit lead-out electrode 3 on the ASIC; covering the ASIC 1, the reflective layer 2 and the circuit lead-out electrode 3, and the carbon dioxide treated by CMP Silicon or silicon nitride layer 4 . Through the silicon dioxide or silicon nitride layer 4, the through hole 5 that is terminated at the circuit lead-out electrode 3; through the metal anchor point that fills the through-hole 5 and is patterned at the position corresponding to the circuit lead-out electrode 3 .

[0085] A sacrificial layer 7 is filled between the metal anchor points, and the sacrificial layer is flush with the top ends of the metal anchor points.

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Abstract

The invention discloses a metal anchor filling technology and a manufacturing method of a detector, and the technology comprises the following steps: preparing an ASIC (Application Specific IntegratedCircuit) with a flattened surface, wherein the ASIC with the flattened surface comprises the ASIC, a reflection layer, a circuit extraction electrode and a silicon oxide or silicon nitride layer subjected to CMP (Chemical Mechanical Polishing) processing; making a through hole at the position of the circuit extraction electrode; sputtering a plurality of metal and metal nitride layers on a silicon oxide thin film of the ASIC; depositing metallic aluminium (tungsten, titanium tungsten, copper and other metals are also available) of certain thickness as a filling metal; patterning the filling metal to form a metal anchor, and after performing a PI CMP technology, coating the anchor in the PI, and performing following processing of the detector after platformization.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS: Micro-electromechanical Systems), in particular to a metal anchor point filling process and a heat detection device. Background technique [0002] Uncooled infrared focal plane array detector (Uncooled infrared focal plane array detector) has a very important strategic position and role in the military and civilian fields, and is currently widely used in automobiles, security, biomedicine, electric power, military, aviation, police, Technical fields such as forest fire prevention and the Internet of Things. In recent years, uncooled infrared detector technology based on microbolometers has achieved large-scale or very large-scale integration with CMOS readout circuits. A microbolometer is a pixel of the two-dimensional image produced by the detector. The change in the thermistor of each microbolometer is converted into a change in the electrical signal of the readou...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81B2201/0207B81C1/00015B81C1/00246
Inventor 甘先锋王杰王鹏王宏臣陈文礼杨鑫
Owner IRAY TECH CO LTD
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