Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion cleaning magnetron sputtering system

A magnetron sputtering system and ion cleaning technology, applied in the field of ion cleaning magnetron sputtering systems, can solve the problems of low reliability, high deployment cost, inconvenient operation and control, etc., and achieve the effect of reliable coating process and saving equipment

Active Publication Date: 2018-06-15
ZHEJIANG HUAYUAN MICRO ELECTRONICS TECH CO LTD
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of process equipment is to carry out two processes of ion cleaning and coating separately, the reliability is not high, the operation control is also inconvenient, and it needs to invest in multiple equipment, and the deployment cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion cleaning magnetron sputtering system
  • Ion cleaning magnetron sputtering system
  • Ion cleaning magnetron sputtering system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Various preferred embodiments of the present invention will be described below with reference to the accompanying drawings. The following description with reference to the accompanying drawings is provided to assist understanding of example embodiments of the invention as defined by the claims and their equivalents. It includes various specific details to aid in understanding but they are to be regarded as exemplary only. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the invention. Also, detailed descriptions of functions and constructions well-known in the art will be omitted to make the description clearer and more concise.

[0023] Such as figure 1 and figure 2 As shown, an ion cleaning magnetron sputtering system includes a vacuum chamber 1 and a target substrate 20 and a wafer tray 30 arranged in the vacuum chamb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an ion cleaning magnetron sputtering system. The ion cleaning magnetron sputtering system comprises a vacuum cavity, a target material substrate and a wafer tray, wherein the target material substrate and the wafer tray are arranged in the vacuum cavity, the target material substrate and the wafer tray are connected with a negative electrode of a power supply or the ground,target materials are arranged on the target material substrate, a wafer is arranged on the wafer tray, and the vacuum cavity is provided with a gas inlet and an exhaust system; the ion cleaning magnetron sputtering system further comprises a shutter device and switching devices, wherein the shutter device is provided with a shutter cover capable of covering or exposing the target materials, one ofthe two switching devices is arranged in a power supply circuit of the wafer tray, and the other one of the switching devices is arranged in a power supply circuit of the target material substrate and the shutter device. The two processes of plasma cleaning and magnetron sputtering are performed through the same set of devices through the switching devices (power switching systems), the purpose of simultaneously achieving wafer ion cleaning and magnetron sputtering is achieved through a shutter device and the two functional switching devices, the coating process is conveniently and reliably completed through the control of the program, and equipment is saved.

Description

technical field [0001] The invention relates to surface acoustic wave device chip technology equipment, and more specifically relates to an ion cleaning magnetron sputtering system. Background technique [0002] Magnetron sputtering is a commonly used coating equipment in the semiconductor industry, but if there are defects in the wafer and invisible micro-stains, it will affect the quality of the coating and the yield rate of the subsequent process. The traditional surface acoustic wave device chip process equipment will add plasma before coating. Cleaning equipment or adding a set of plasma cleaning device in the cavity of coating equipment to achieve the purpose of improving coating quality. However, this kind of process equipment is to carry out two processes of ion cleaning and coating separately, the reliability is not high, the operation control is also inconvenient, and it needs to invest in multiple equipment, and the deployment cost is high. Contents of the inven...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/02
CPCC23C14/022C23C14/35
Inventor 刘绍侃霍俊标张雪奎
Owner ZHEJIANG HUAYUAN MICRO ELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products