A method of semiconductor three-quantum dot structure to realize mid-far infrared single-photon detection

Abstract

The invention relates to a method for realizing middle and far infrared single-photon detection through a semiconductor three-quantum-dot structure. In the field of middle and far infrared detection of the semiconductor quantum structure, the electron activation service life in the quantum dot is longer than that of an existing relatively mature quantum dot infrared detector, and therefore the quantum dot detector has advantages of higher working temperature and higher photoconductive gain. According to the method of the invention, a Fano type quantum interference channel is introduced, thereby improving photon absorption efficiency and further improving the photoconductive gain. Furthermore, because photon absorption occurs in the middle quantum dot C, influence of a surrounding environment is reduced and working temperature is further increased.

Description

technical field [0001] The invention relates to a method for detecting mid- and far-infrared single photons by using semiconductor quantum dots, and belongs to the application field of infrared and far-infrared detection. Background technique [0002] Single-photon detectors have a wide range of applications in imaging, chemical analysis, environmental monitoring, and laser ranging. In the visible and near-infrared range, single-photon detection can be achieved using avalanche photodiodes and photomultiplier tubes. However, in the mid-to-far infrared wavelength range, the small photon energy makes it difficult to generate stable photogenerated carriers in solids. At present, there are three main detection methods in the mid-to-far infrared wavelength range: one is to use the nonlinear effect of electro-optic crystals for differential detection, which has high sensitivity and can detect radiation intensity and phase at the same time; the other is pyroelectric detectors. The...

AI Technical Summary

Problems solved by technology

[0003] Differential detection detectors are large in size, not easy to integrate with semiconductor circuits, and have great limitations; pyroelectric detectors have low responsivity and no spectral resolution ability; quantum well detectors have large dark currents and cannot detect weak mid-to-far infrared radiation

These three types of detectors currently basically do not have single-photon precision, and cannot achieve sensitive detection of weak mid- and far-infrared light.

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