Semiconductor device, RC-IGBT, and method of manufacturing semiconductor device

Abstract

According to one embodiment, a semiconductor device 100 includes a semiconductor substrate 1 including a first principal surface and a second principal surface, an emitter electrode 46, a gate wiring49, a collector electrode 43, a first unit cell region 10 that is extended along one direction in a plane parallel to the first principal surface, and a second unit cell region 20 that is extended along one direction, in which the semiconductor substrate 1 of the first unit cell region 10 and the second unit cell region 20 includes an N- type drift layer 39, an N type hole barrier layer 38, a trench electrode 13, a P type body layer 36, an insulating film 35, an N type field stop layer 41, and a P+ type collector layer 42, and the second unit cell region 20 includes an N type cathode layer 47that is fitted into the collector layer 42 and is extended along one direction.

Description

[0001] Cross references to related applications [0002] This application is based on and claims the priority of Japanese Patent Application No. 2016-232547 filed on November 30, 2016, the entire content of which is incorporated herein by reference. Technical field [0003] The present application relates to semiconductor devices, RC-IGBTs, and methods of manufacturing semiconductor devices, and to semiconductor devices, RC-IGBTs, and methods of manufacturing semiconductor devices, for example, mounted on electric vehicles, other mechanical equipment, or the like using electric motors. Background technique [0004] Motor-driven power devices are installed on electric vehicles, other mechanical equipment, or the like that use motors. The power device driven by the motor includes, for example, an insulated gate bipolar transistor (hereinafter, it will be referred to as IGBT) and a freewheeling diode (hereinafter, it will be referred to as FWD) used with the IGBT. [0005] The reverse-c...

AI Technical Summary

Problems solved by technology

[0011] Japanese Unexamined Patent Application Publication No. 2013-197306 discloses an RC-IGBT in which a first lifetime controlled region is formed on the collector side in the IGBT region, whereby the flow of carriers on the emitter side The lifetime becomes long and the lifetime of carriers on the collector side is shortened, and a second lifetime controlled region is formed on the anode side in the FWD region, whereby the lifetime of carriers on the anode side is shortened and make the lifetime of the carriers on the cathode side longer

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