Zinc-doped nickel oxide hole transport layer reserve perovskite solar cell and preparation method

A technology of hole transport layer and solar cell, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low conductivity and change, achieve optimized performance, high conductivity, increase light transmittance and hole extraction efficiency effect

Inactive Publication Date: 2018-05-22
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Nickel oxide is a wide-bandgap p-type semiconductor material with a bandgap of 3.6 eV, which matches the energy level of perovskite and has high transmittance in the visible light range, making it suitable for optoelectronic devices such as perovskite solar cells. However, its low conductivity has always been the disadvantage of the hole transport layer, and doping can change this situation to the greatest extent.

Method used

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  • Zinc-doped nickel oxide hole transport layer reserve perovskite solar cell and preparation method
  • Zinc-doped nickel oxide hole transport layer reserve perovskite solar cell and preparation method
  • Zinc-doped nickel oxide hole transport layer reserve perovskite solar cell and preparation method

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Embodiment 1

[0026] (1) The schematic diagram of the structure of the traditional inverted planar heterojunction solar cell is as follows: figure 1 . Cut the FTO transparent conductive glass into 1.6cm long strips, stick a tape with a width of one centimeter, etch with zinc powder and dilute hydrochloric acid with a volume ratio of concentrated hydrochloric acid to water of 1:5 for 15 minutes, and clean the residue with dilute hydrochloric acid zinc powder, cut the etched glass into 1.6×1.7cm rectangles, ultrasonically clean with lye for 30-60 min, then ultrasonically clean with alcohol for 30-60 min, and finally clean with deionized water for 10-30 min, Then put it into the drying box to dry for later use;

[0027] (2) Dissolve nickel nitrate in a mixed solvent of ethylenediamine and ethylene glycol, then place the mixed precursor solution on a magnetic stirrer and stir for twelve hours, obtain a clear solution after filtration, and then spin-coat the nickel oxide precursor solution for...

Embodiment 2

[0031] This embodiment is the same as Example 1, except that in step 2, nickel nitrate and zinc nitrate are mixed in a mixed solvent of ethylenediamine and ethylene glycol in proportion, wherein the zinc nitrate molar ratio is 3%, (the nitric acid The molar ratio of zinc to nickel nitrate is 3:97, the volume ratio of ethylenediamine and ethylene glycol is 1:10, and the concentration of zinc nitrate and nickel nitrate in the mixed solvent is 1M.) Then put the mixed precursor solution under magnetic force Stir on the stirrer for 12 hours, filter to obtain a clear solution, then spin-coat the mixed precursor solution of zinc nitrate and nickel nitrate on the fluorine-doped tin oxide glass (FTO glass) substrate for 40 seconds, and finally put the obtained substrate into a rapid annealing furnace Annealing at 400 °C for 3600 s to obtain zinc-doped nickel oxide films such as figure 2 (right).

Embodiment 3

[0033] This embodiment is the same as Example 2, except that in step 2, nickel nitrate and zinc nitrate are mixed in a mixed solvent of ethylenediamine and ethylene glycol in proportion, wherein the zinc nitrate molar ratio is 5%, (the nitric acid The molar ratio of zinc to nickel nitrate is 5:95, the volume ratio of ethylenediamine and ethylene glycol is 1:10, and the concentration of zinc nitrate and nickel nitrate in the mixed solvent is 1M.) Then put the mixed precursor solution under magnetic force Stir on the stirrer for 12 hours, filter to obtain a clear solution, then spin-coat the mixed precursor solution of zinc nitrate and nickel nitrate on the fluorine-doped tin oxide glass (FTO glass) substrate for 40 seconds, and finally put the obtained substrate into a rapid annealing furnace Zinc-doped nickel oxide film was obtained by annealing at 400°C for 3600s.

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Abstract

The invention belongs to the technical field of preparation of perovskite solar cells and particularly relates to a zinc-doped nickel oxide hole transport layer reserve perovskite solar cell and a preparation method thereof. The reserve perovskite solar cell preparation method comprises steps: (1) FTO glass is provided; (2) the zinc-doped nickel oxide hole transport layer is prepared; (3) a perovskite body heterojunction thin film is prepared; (4) an electron transport layer is prepared on the perovskite layer; (5) an electrode modification layer is prepared; and (6) a metal electrode is prepared. The brand new hole transport layer is adopted, a hole extraction layer which has high transmittance, high conductivity and high work function and is well matched with the perovskite is obtained through optimizing the nickel oxide thin film by doped zinc, the performance is optimized, and the structure is stable.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cell preparation, in particular to a high-efficiency perovskite solar cell with a zinc-doped nickel oxide hole transport layer and a preparation method thereof. Background technique [0002] Since the first report of perovskite solar cells in 2009, the energy conversion efficiency has improved rapidly, from the initial 3.8% to 22.1%. The emergence of perovskite solar cells has brought new hope for the development of solar cells. On both sides of the perovskite light-absorbing layer are the electron transport layer and the hole transport layer. The ability of the hole transport layer to extract holes directly determines the photoelectric conversion efficiency of the solar cell. It can be seen that the importance of the hole transport layer is self-evident. . [0003] At present, the hole transport layer used in most solar cells with high photoelectric conversion efficiency is an organic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/30H10K30/10H10K30/00Y02E10/549
Inventor 万兴兴曹丙强
Owner UNIV OF JINAN
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