A small-signal intrinsic parameter extraction method for algan/gan HEMT microwave power devices

Abstract

The invention discloses a method for extracting small-signal intrinsic parameters of an AlGaN / GaN HEMT microwave power device, including: S1: using a finite element thermal simulation method to extract a relational expression of the nonlinear thermal resistance of a GaN HEMT device with the power consumption and size of the device ; S2: Using the S parameter test data under cold pinch-off bias conditions, extract the parasitic parameter values ​​of GaN HEMT devices at room temperature; S3: Using the device pulse I‑V test data at different ambient temperatures, extract the parasitic resistance R s and R d Change relation with temperature, get R under different bias conditions s and R d S4: Using the test data of S parameters under various bias conditions, the parasitic parameters are stripped, and the Y parameters of the intrinsic network are obtained, and the intrinsic parameter values ​​of the small-signal equivalent circuit of the device are calculated. This method introduces a parasitic resistance R s and R d The relationship with temperature changes makes the extracted intrinsic parameter values ​​more credible and more physically meaningful.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for extracting small signal intrinsic parameters of AlGaN / GaN HEMT microwave power devices. Background technique [0002] AlGaN / GaN high electron mobility transistor (GaN HEMT) has the advantages of very high two-dimensional electron gas (2-DEG) concentration, high saturation electron migration velocity and high breakdown voltage, which makes GaN HEMT devices have great potential in microwave power applications. The incomparable advantages of GaAs devices are the current research and application hotspots, and have broad application prospects in communication, radar, satellite and other fields. [0003] Transistor device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. Accurate device models are becoming more and more important, which will not only improve the accuracy of circuit desig...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the deficiencies of the prior art, provide a method for extracting the intrinsic parameters of small signals of AlGaN / GaN HEMT microwave power devices, and solve the problem that the extracted intrinsic parameters deviate from the actual physical meaning without considering the "thermal effect" in the prior art The problem

Images