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Preparation method of Ag nanoparticle loaded ZnO film

A nanoparticle and thin film technology is applied in the field of preparation of Ag nanoparticle-supported ZnO thin films, which can solve the problems of unsatisfactory electrochemical performance, expensive chemical reagents, complicated preparation process, etc., and achieve improved electrochemical performance, low price, and preparation process. simple effect

Inactive Publication Date: 2018-05-08
HEFEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on the technical problems existing in the background technology, the present invention proposes a method for preparing ZnO thin films supported by Ag nanoparticles, so as to make up for the unsatisfactory electrochemical performance, complicated preparation process and required chemical reagents when preparing ZnO thin films in the prior art. Defects such as expensive or toxic

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  • Preparation method of Ag nanoparticle loaded ZnO film
  • Preparation method of Ag nanoparticle loaded ZnO film
  • Preparation method of Ag nanoparticle loaded ZnO film

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Embodiment 1

[0041] The invention discloses a method for preparing a ZnO thin film supported by Ag nanoparticles, comprising preparing the ZnO thin film, uniformly mixing the prepared ZnO thin film with a silver nitrate solution, and obtaining the ZnO thin film supported by Ag nano particles after being irradiated with ultraviolet light.

Embodiment 2

[0043] A preparation method of Ag nanoparticles loaded ZnO film, comprising the steps of:

[0044] S1. Preparation of ZnO seed layer: After ultrasonically cleaning a single-polished silicon wafer with a size of 15mm×15mm×1mm in acetone and deionized water for 20 minutes, place it in an oven at 60°C, and dry it in the atmosphere to obtain a spare silicon wafer. slices; mix the zinc acetate solution and stabilizer evenly, put it in a magnetic stirring water bath, heat up, keep warm, cool down, and stand still to obtain the ZnO precursor solution; use the film throwing method to coat the ZnO precursor solution on the spare silicon wafer Finally, successively carry out glue dropping, glue homogenization, primary pretreatment, cooling to room temperature, secondary pretreatment, and annealing in a high-temperature tube furnace to obtain a ZnO seed layer;

[0045] S2. Preparation of ZnO film: Pour the solution containing zinc ions prepared by dissolving zinc nitrate hexahydrate and ...

Embodiment 3

[0063] A preparation method of Ag nanoparticles loaded ZnO film, comprising the steps of:

[0064] S1. Preparation of ZnO seed layer: After ultrasonically cleaning a single-polished silicon wafer with a size of 15mm×15mm×1mm in acetone and deionized water for 20 minutes, place it in an oven at 60°C, and dry it in the atmosphere to obtain a spare silicon wafer. slices; mix the zinc acetate solution and stabilizer evenly, put it in a magnetic stirring water bath, heat up, keep warm, cool down, and stand still to obtain the ZnO precursor solution; use the film throwing method to coat the ZnO precursor solution on the spare silicon wafer Finally, successively carry out glue dropping, glue homogenization, primary pretreatment, cooling to room temperature, secondary pretreatment, and annealing in a high-temperature tube furnace to obtain a ZnO seed layer;

[0065] S2. Preparation of ZnO film: Pour the solution containing zinc ions prepared by dissolving zinc nitrate hexahydrate and ...

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Abstract

The invention discloses a preparation method of an Ag nanoparticle loaded ZnO film. The preparation method of the Ag nanoparticle loaded ZnO film comprises the following steps: preparing a ZnO film, mixing the prepared ZnO film and a silver nitrate solution uniformly, and performing ultraviolet illumination to obtain the Ag nanoparticle loaded ZnO film. According to the preparation method providedby the invention, the defects in the prior art that the electrochemical property is not ideal, the preparation process is complex and the required chemical reagents are expensive or toxic during thepreparation of the ZnO film are overcome.

Description

technical field [0001] The invention relates to the field of nanocomposite thin film materials, in particular to a method for preparing a ZnO thin film supported by Ag nanoparticles. Background technique [0002] At present, the energy crisis and environmental issues have become two key issues restricting the development of the world economy and society. To develop and utilize clean renewable energy such as solar power, improve the energy structure, reduce greenhouse gas emissions, and protect the environment on which human beings depend. It has become an important part of the world's energy sustainable development strategy; on the other hand, traditional environmental governance methods have disadvantages such as incomplete degradation of pollutants, high energy consumption, large investment, and possible secondary pollution. Therefore, looking for degradation Pollutant degradation methods with high efficiency and low energy consumption are research hotspots today. Since p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/58B01J23/66
CPCC09K11/584B01J23/66B01J37/345B01J35/39B01J35/33
Inventor 吕建国赵敏汪文豪程跃兵朱维丽
Owner HEFEI NORMAL UNIV
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