Chamber components for processing chambers and methods of making articles

Abstract

A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body. The protective layer has a first thickness of less than 300 μm on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.

Description

[0001] This application is a divisional application of a Chinese patent application with the application date of July 15, 2014, the application number 201480040772.6, and the title "Ion-Assisted Deposition of Rare Earth Oxide-based Thin Film Coatings on Process Rings". technical field [0002] Embodiments of the invention generally relate to chamber process rings having thin-film plasma-resistant protective layers. Background technique [0003] In the semiconductor industry, devices are fabricated through a number of fabrication processes that produce structures of ever decreasing size. Some fabrication processes, such as plasma etching and plasma cleaning processes, expose substrates to high velocity plasma streams to etch or clean the substrates. Plasmas can be highly aggressive and can attack processing chambers and other surfaces exposed to the plasma. [0004] Current process kit rings have performance issues due to high etch rates and plasma chemical interactions. In...

AI Technical Summary

Problems solved by technology

Severe corrosion of these rings can lead to particle defects on the wafer, process excursions, deposition of corrosion by-products on other chamber components, and reduced chamber yield

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