Synthesis method of indium phosphide and synthesis device thereof

A synthesis method and synthesis device technology, applied in the field of preparation of synthetic materials, to achieve the effects of low cost, no indium residue, and high efficiency

Inactive Publication Date: 2018-04-20
珠海鼎泰芯源晶体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through the above technical innovations, the polycrystalline synthesis method proposed by the present invention can solve the problems existing in the traditional HB / HGF InP polycrystalline synthesis method, and realize the perfect combination of low cost, high efficiency, high purity, and no indium residue

Method used

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  • Synthesis method of indium phosphide and synthesis device thereof
  • Synthesis method of indium phosphide and synthesis device thereof
  • Synthesis method of indium phosphide and synthesis device thereof

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Embodiment Construction

[0023] Embodiments of the method for synthesizing indium phosphide and its synthesizing device according to the present invention will be described below with reference to the accompanying drawings. Those skilled in the art would recognize that the described embodiments can be modified in various ways or combinations thereof without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Also, in this specification, the drawings are not drawn to scale, and like reference numerals denote like parts.

[0024] The invention discloses a synthesis method of indium phosphide, which can improve the stoichiometric ratio and purity of indium phosphide polycrystal. Such as image 3 As shown, it can be seen that the device for synthesizing indium phosphide includes three continuous temperature zones, that is, polycrystalline cooling zone D, reaction zone B, and phosphor...

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Abstract

The invention relates to a synthesis method of indium phosphide and a synthesis device thereof. A first container for storing indium and a second container for storing phosphorus in a sealed pipe areboth placed in a phosphorus pressure control area initially, the temperature of the phosphorus pressure control area is greater than or equal to the vaporization temperature of phosphorus and is lowerthan the melting point of indium phosphide, the temperature of the phosphorous pressure control area is utilized to melt and preheat indium and vaporize phosphorus, and in the moving direction of thesealed pipe, the first container is located in front of the second container; the sealed pipe moves from the phosphorous pressure control area to a reaction area, the temperature of the reaction areais greater than or equal to the melting point of indium phosphide, in the reaction area, phosphorus steam is melted into an indium melt to form an indium phosphide melt; the sealed pipe moves from the reaction area to a polycrystal cooling area, the temperature of the polycrystal cooling area is lower than the reaction area, and the indium phosphide melt cools into an indium phosphide polycrystalin the polycrystal cooling area. According to the invention, the phosphorous pressure control area is utilized to store liquid indium to effectively avoid the Si pollution problem caused by reactionof high temperature indium with a quartz crucible wall, and the InP polycrystal product has higher purity.

Description

technical field [0001] The invention relates to a method and a device for preparing a synthetic material, in particular to a method for synthesizing indium phosphide and a device for synthesizing it. technical background [0002] Mobile communication, broadband Internet, millimeter-wave satellite communication, and infrared technology have become important technical support and necessary infrastructure for the development of today's information society, economic growth, and technological progress. Compound semiconductor InP is an important basic material for manufacturing optical fiber communication transceiver and amplifier devices and circuits, millimeter wave devices and circuits, infrared detectors and other optoelectronic devices. Its excellent performance and application fields are irreplaceable. In recent years, the demand for InP wafers has been increasing at an annual rate of 15%. All countries in the world have paid great attention and invested heavily in the deve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B28/04C30B28/14
CPCC30B29/40C30B28/04C30B28/14
Inventor 段满龙董志远赵有文杨俊
Owner 珠海鼎泰芯源晶体有限公司
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