High electron mobility transistor and manufacturing method thereof

Abstract

The invention discloses a high electron mobility transistor and a manufacturing method thereof. A recessed gate is formed through manufacturing a secondary epitaxial barrier layer in a gate area on afirst thin AlGaN barrier layer, epitaxially growing a second AlGaN barrier layer and a GaN cap layer on the first thin AlGaN barrier layer in sequence and removing the barrier layer. Therefore, any dry and wet etching process is not needed when the recessed gate is manufactured, the damage of etching to the surfaces of the AlGaN barrier layers is avoided and the interface state is reduced to ensure excellent performance of the transistor; and in addition, the recessed gate is achieved through secondary epitaxy of AlGaN, so that the transistor has double AlGaN barrier layers, sufficient electrons in a channel are ensured and the transistor has relatively high breakover current.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a high electron mobility transistor and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN) material has a large band gap, high critical breakdown field strength, fast electron saturation and drift speed, and can form a high-concentration two-dimensional electron gas and channel electrons without doping with the heterojunction of AlGaN material. The high mobility and other properties make it the material of choice for the preparation of high-frequency and high-power microwave transistors. [0003] In 1979, T.Mimura proposed the concept of High Electron Mobility Transistor (HEMT) for the first time, and produced a depletion-type AlGaAs / GaAs HEMT device in the second year, and an enhancement-type device also appeared in the same year . Research on AlGaN / GaN HEMTs began in 1992. In 1992, Khan et al. from APA Optical Company of the United States success...

AI Technical Summary

Problems solved by technology

As for the etching method of the gate area, it is divided into two methods: dry method and wet method. The reliability cannot be guaranteed, and it is not suitable for the development of mass production processes; the wet etching solution is an effective means to solve the problem of dry etching damage, but it also has its own disadvantages, such as poor process compatibility, pollution of existing process platforms, and complex processes. operational hazards, etc.

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