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Gradient monocrystalline diamond and preparation method thereof

A single crystal diamond, gradient technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high-quality single crystal diamond easily cracked, low wear resistance of nitrogen-containing diamond, etc., and achieve high hardness , The effect of inhibiting the growth of steps and saving costs

Active Publication Date: 2018-02-27
湖北碳六科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to provide a synthetic method of gradient single crystal diamond and its products, which can solve the problems that high-quality single crystal diamond without nitrogen is easy to crack and the wear resistance of nitrogen-containing diamond is not high under high-speed cutting processing conditions.

Method used

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  • Gradient monocrystalline diamond and preparation method thereof
  • Gradient monocrystalline diamond and preparation method thereof
  • Gradient monocrystalline diamond and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A method for synthesizing gradient single crystal diamond and its products, comprising: adopting microwave plasma chemical vapor deposition equipment, using a mixed gas source of hydrogen, methane, and high-purity air as a reaction gas into a reaction chamber, and using a working pressure of 20kPa 1. Under the condition of single crystal diamond substrate temperature of 1000°C, high-speed homoepitaxial growth of gradient single crystal diamond is realized. During the gradient single crystal diamond growth process, the flow of hydrogen, methane and high-purity air into the reaction chamber is controlled by a gas flow meter. Hydrogen, methane, and high-purity air are uniformly mixed before entering the reaction chamber. Among them, the feeding method of hydrogen and methane is continuous feeding, and the feeding method of high-purity air is continuous gradient method.

[0045] Further, the specific method of the continuous gradient method is: continuously gradiently cont...

Embodiment 2

[0050] In the present invention, when growing single crystal diamond, a certain concentration of high-purity air is mixed into the mixed gas source of hydrogen and methane, nitrogen can increase the growth rate of single crystal diamond, oxygen can improve the growth quality of single crystal diamond, and the continuous gradient method controls the mixing of hydrogen The concentration ratio of high-purity air in the methane mixed gas source can realize the gradient change of single crystal diamond quality. On the premise of ensuring the high speed and high hardness growth of single crystal diamond, it can also improve the toughness of single crystal diamond and greatly improve the wear resistance of single crystal diamond.

[0051] A method for growing single crystal diamond at a high speed in the present invention, comprising: controlling the working pressure of single crystal diamond growth to 16.8kPa; controlling the working temperature of single crystal diamond to 980°C; O...

Embodiment 3

[0056] Example 3 Effect of high-purity air composition on the quality of gradient single crystal diamond

[0057] Change the composition of high-purity air, including see Table 1 according to volume percentage, others are the same as in Example 2, compare with Comparative Example 1-5, the comparison of the number of workpieces processed by diamond tools is shown in Table 1, and it can be seen from Table 1 that nitrogen and oxygen in high-purity air The ratio of nitrogen to oxygen is a specific range interval. When the ratio of nitrogen to oxygen is close to 4:1, the number of processing is the best. This is because the ratio of nitrogen atoms to oxygen atoms is too high to reduce the hardness of single crystal diamond, and the ratio is too low. It will lead to a decrease in the overall strength of the material, thereby affecting the processing performance of the tool, while less carbon dioxide, argon and water vapor have less impact on the product.

[0058] Table 1 Effect of h...

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Abstract

The invention relates to the field of growth of monocrystalline diamonds through a microwave plasma chemical vapor deposition method and in particular relates to a gradient monocrystalline diamond anda preparation method thereof. Microwave plasma chemical vapor deposition equipment is adopted and high-purity air is introduced in a hydrogen and methane mixed gas source according to a continuous gradient concentration, so as to realize alternating deposition of a high-quality monocrystalline diamond layer without nitrogen and a nitrogen-containing diamond layer; then the gradient monocrystalline diamond with high quality, high strength and good toughness is prepared.

Description

technical field [0001] The invention relates to the field of growing single crystal diamond by a microwave plasma chemical vapor deposition method, in particular to a gradient single crystal diamond and a preparation method thereof. Background technique [0002] Single crystal diamond has many excellent physical and chemical properties, and has been widely used in many industrial fields. At present, Microwave Plasma Chemical Vapor Deposition (MPCVD) technology is the most commonly used method for preparing single crystal diamond, and it is also the most mature method. Use microwave energy to dissociate hydrogen and carbon-containing gas sources (such as methane, acetylene, acetone, etc.) into the reaction chamber into atomic hydrogen and carbon-containing groups, and the sp3 single crystal diamond phase carbon-containing groups are on the single crystal diamond lining Adsorption deposition on the substrate enables homoepitaxial growth of single crystal diamond. [0003] Ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B29/04C23C16/27
CPCC23C16/274C23C16/276C23C16/277C23C16/278C30B25/025C30B25/165C30B29/04
Inventor 朱瑞武迪郑大平肖景阳杨明
Owner 湖北碳六科技有限公司
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